40-W/mm Double Field-plated GaN HEMTs

Wu, Yifeng; Moore, M.; Saxler, A.; Wisleder, T.; Parikh, P.

doi:10.1109/drc.2006.305162

Cited by 275 publications

(136 citation statements)

References 2 publications

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“…We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN 1 and frequencies well exceeding 300 GHz. 2 Commercial applications, however, typically allow devices to operate only up to 5-7 W/mm, with the concern that excess device heating would result in early device failure.…”

mentioning

confidence: 91%

“…GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity Dong Liu, 1,2,a) Huarui Sun, 1 James W. Pomeroy, 1 Daniel Francis, 3 Firooz Faili, 3 Daniel J. Twitchen, 3 and Martin Kuball 1 The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN 1 and frequencies well exceeding 300 GHz.…”

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confidence: 99%

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GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

Liu

Sun

Pomeroy

et al. 2015

Applied Physics Letters

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The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

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mentioning

confidence: 91%

mentioning

confidence: 99%

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

Liu

Sun

Pomeroy

et al. 2015

Applied Physics Letters

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“…Monte Carlo simulations in GaN have predicted peak electron drift velocities as high as 3 x 10 7 cm/s, with comparatively lower saturation velocities up to ~ 2 x 10 7 cm/s, limited mainly by optical phonon scattering [7][8][9][10][11] . From the total time delay analysis in recent ultra-scaled GaN HEMT results, the average electron velocity, vave, of the devices was found to be in the range from 1 × 10 7 to 2.8 × 10 7 cm/s [1][2][3][4] .…”

mentioning

confidence: 99%

“…III-nitride high electron mobility transistors (HEMTs) have demonstrated promising high frequency operation for RF power amplifying applications [1][2][3][4] . Their high current and power gain capability, and further increases in the operation frequency could enable high power electronics in the mm-wave and THz regime.…”

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confidence: 99%

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj

Shoron

Park

et al. 2015

Applied Physics Letters

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Abstract:We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10 7 cm/s at a low sheet charge density of 7.8 x 10 11 cm -2 . A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.a)

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“…Output power densities at microwave frequencies of GaN based HEMTs on both sapphire and SiC substrates have improved from initial 1.1 W/mm in 1996. Recently, it has been demonstrated impressive AlGaN/GaN microwave power HEMTs with high output power capability, as high as 40 W/mm [29]. A major obstacle has been controlling the trap densities in the bulk and surface of the material affecting the performance of these devices by trapping effects though draincurrent collapse [30].…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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40-W/mm Double Field-plated GaN HEMTs

Cited by 275 publications

References 2 publications

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Wide Band Gap Semiconductor Devices for Power Electronics

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