40-Gb/s tandem electroabsorption modulator

Mason, B.; Ougazzaden, A.; Lentz, C.W.; Glogovsky, K.G.; Reynolds, C. L.; Przybylek, G.J.; Leibenguth, R. E.; Kercher, Terry L.; Boardman, John; Rader, M.T.; Geary, J.; Walters, F.S.; Peticolas, L. J.; Freund, J. M.; Chu, S. N. G.; Sirenko, A. A.; Jurchenko, R.J.; Hybertsen, Mark S.; Ketelsen, L.J.P.; Raybon, G.

doi:10.1109/68.974150

Cited by 46 publications

(10 citation statements)

References 3 publications

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“…By the precise design of mask geometry, generally two dielectric mask stripes on both sides of the SAG region, different structures, in terms of thicknesses and compositions, can be grown on the same wafer. SAG has been widely used for the "longitudinal" integration, in the optical guide direction, of active and passive components such as electro-absorption modulators (EAM), lasers, semi-conductor optical amplifiers (SOA) and spot size converters (SSC) [1]. More recently, SAG has demonstrated its high potential for "transversal" integration, with large wavelength shift of numerous juxtaposed devices such as lasers arrays for wavelength division multiplexing (WDM) [2].…”

Section: Introductionmentioning

confidence: 99%

240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

Décobert

Dupuis

Lagrée

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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We studied the Selective Area Growth of AlGaInAs Multiple Quantum Wells for wide wavelength range applications such as Coarse Wavelength Division Multiplexing. A 3-D vapor phase diffusion model is used to simulate the complete set of mask patterns. Due to high mask density, the long-range effect of Ga and Al compared to In species is a limiting parameter for the total achievable wavelength extension. Based on these simulations, we predicted and experimentally obtained a total PL wavelength shift of 240 nm.

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Section: Introductionmentioning

confidence: 99%

240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

Décobert

Dupuis

Lagrée

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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“…In some experiments two discrete EAMs were cascaded [3,8,[24][25] and, e.g., FWHM pulse width of 2.8 ps and a PTER of ∼30 dB were achieved using a clock frequency of 40 GHz. Also integration of two EAMs [26] and with an SOA between them [27] was shown.…”

Section: Direct Rz Data Modulationmentioning

confidence: 99%

Application of electroabsorption modulators for high-speed transmission systems

2005

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“…This technique continues to attract considerable interest as a powerful tool for monolithic integration of active and passive photonic functions. Since the earliest works, considerable efforts have been made to analyze the experimental data, to model the growth mechanisms [3][4][5][6][7][8][9][10][11][12][13][14], and finally, to serve more and more complex integration schemes, mostly developed for the telecommunication needs [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

AlGaInAs MOVPE selective area growth for photonic integrated circuits

Décobert

Binet²,

Maia³

et al. 2015

Advanced Optical Technologies

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We developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.Keywords: AlGaInAs multiple quantum wells (MQW); electro-absorption modulators; metal organic vaporphase epitaxy (MOVPE); phase shift keying (PSK); photonic integrated circuit (PIC); selective area growth (SAG).

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40-Gb/s tandem electroabsorption modulator

Cited by 46 publications

References 3 publications

240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

Application of electroabsorption modulators for high-speed transmission systems

AlGaInAs MOVPE selective area growth for photonic integrated circuits

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