40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes

High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.

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Systematic modulation of negative-differential transconductance effects for gated p+-i-n+ silicon ultra-thin body transistor

Kim

Lee

2017

Journal of Applied Physics

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We demonstrate the precise control of the negative-differential transconductance (NDT) effects on a gated p+-i-n+ Si ultra-thin body transistor. The device clearly displays the N-shape transfer characteristic (i.e., NDT effect) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics. The position and the current level of the peak in the NDT region are systematically controllable when modulating the potential profile at the channel-source junction. Namely, the NDT effect can be systematically modulated through modifying the band-to-band tunneling condition by controlling both gate- and drain-bias voltages. In-depth analyses on the transport characteristics and transport mechanisms are discussed.

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40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes

Cited by 8 publications

References 21 publications

Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Systematic modulation of negative-differential transconductance effects for gated p+-i-n+ silicon ultra-thin body transistor

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