4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Abstract

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Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

“…To compare device design solutions and to assess the MCC performance, we performed failure analysis with a complex mixed mode Technology Computer Aided Design (TCAD) model that was previously developed and validated [10]- [12]. It includes a model for the wafer device but also the external circuit and gate unit.…”

“…It additionally improves the MCC and minimises the on-state losses. The effectiveness of the HPT+ technology on BGCTs and the impact of shallow diode anodes on the MCC was investigated in [12] but not on the neo BGCTs.…”