4‐3: Invited Paper: High Mobility Oxide Thin‐film Transistors for AMOLED Displays

Abstract

The present report provides a brief overview on the recent development of high mobility oxide TFTs, and the technical challenges that need to be addressed for display applications. High peiformance devices offer a broader range of opportunities in the scaling of driving circuitry or reduction of power consumption in comparison with In‐Ga‐Zn‐0 (IGZO) TFTs. However, technical hurdles are still present, an important issue being the trade‐off relationship between device performance and reliability.

Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display

“…Although research has been conducted on highmobility OS materials that surpass the commonly used indium-gallium-zinc oxide (IGZO)(111), these materials still suffer from issues such as normally on characteristics and low reliability, as evidenced in negative bias temperature illumination stress (NBTIS) tests. [5][6][7] Various strategies have been explored to increase on-state current, such as shortening the channel length (L) of FETs. However, the structural and fabrication limitations of FETs present obstacles to achieving stable L and on-state characteristics.…”

“…Nevertheless, OSs face challenges in boosting the driving speed of driver circuits and increasing the number of pixels due to their lower mobility and on‐state current compared with LTPS. Although research has been conducted on high‐mobility OS materials that surpass the commonly used indium–gallium–zinc oxide (IGZO)(111), these materials still suffer from issues such as normally on characteristics and low reliability, as evidenced in negative bias temperature illumination stress (NBTIS) tests 5–7 . Various strategies have been explored to increase on‐state current, such as shortening the channel length ( L ) of FETs.…”

Advances in mobility enhancement of ITZO thin-film transistors: a review

“…Amorphous indium-gallium-zinc oxide (α-IGZO) TFTs [23,25] have emerged as the first successful commercialized option among various MO TFTs thanks to their exceptional characteristics, such as high mobility, low leakage current, and steep subthreshold swing. IGZO TFTs are not only utilized in AMLCD panels [24,25] but are also extensively employed in the drive circuitry of AM light-emitting diode (LED) display panels [26,27] .…”