3H luminescence in electron-irradiated diamond samples and its relationship to self-interstitials

Steeds, John W; Davis, T. J.; Charles, SJ; Hayes, J.M.; Butler, J. E.

doi:10.1016/s0925-9635(99)00144-2

Cited by 69 publications

(49 citation statements)

References 11 publications

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“…However, at 80 K the TR12 PL intensity for both samples was unchanged after laser illumination whereas the 3H bleaching was still observed. We note, that the two-rate 3H bleaching was observed also at much lower (6 K) temperatures by Steeds et al [2].…”

Section: Resultssupporting

confidence: 56%

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Laser-Induced Transformation of 3H Defects in Diamond

Власов

Ralchenko

Goovaerts

2002

phys. stat. sol. (a)

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Section: Resultssupporting

confidence: 56%

“…However the prevalence quickly, for a few seconds, vanishes after UV or intense blue laser irradiation of the diamond [1][2][3], that results in the line bleaching. We have found [3] that the bleaching is accompanied by an enhancement of the 507.6 nm line in the PL spectra of chemical vapour deposited (CVD) diamond.…”

Section: Introductionmentioning

confidence: 99%

Laser-Induced Transformation of 3H Defects in Diamond

Власов

Ralchenko

Goovaerts

2002

phys. stat. sol. (a)

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“…37 On the contrary the luminescence spectrum of the 3H system is characterized by a ZPL at 2.463 eV and by a single significant phonon replica at ϳ70 meV, 31 whose intensity at room temperature remains weaker than the one of the ZPL. 38,39 Such a structure matches the CL spectrum reported in Fig. 5͑b͒ where the narrow and relative intense ZPL at 2.463 eV is followed by a weak peak at 2.389 eV, i.e., its phonon replica at ϳ72 meV.…”

Section: Area Outside Contactsupporting

confidence: 86%

“…39 the feature at 2.519 eV ͑60 meV above the energy of the ZPL͒ has been assigned to the 3H system ͑it is reported that at least six other centers show a luminescence line at energy above the ZPL͒. In earlier works this luminescence center has been ascribed to an oxygen-vacancy pair, 40 but more recent studies lead to believe the 3H center to be related to interstitials, probably the ͗100͘ split self-interstitial, 38 although at present neither its structure, nor its charge state, nor its annealing behavior have been ultimately established. ͑d͒ a luminescence system extending roughly from 2.8 to 3.2 eV with a narrow intense line at 3.189 eV: the so-called "3.188 eV system."…”

Section: Area Outside Contactmentioning

confidence: 98%

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

Almaviva

Angelone

Marinelli

et al. 2009

Journal of Applied Physics

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High performance neutron detectors sensitive to both thermal and fast neutrons are of great interest to monitor the high neutron flux produced, e.g., by fission and fusion reactors. An obvious requirement for such an application is neutron irradiation hardness. This is why diamond based neutron detectors are currently under test in some of these facilities. In this paper the damaging effects induced in chemical vapor deposition (CVD) diamond based detectors by a neutron fluence of ∼2×1016 neutrons/cm2 have been studied and significant changes in spectroscopic, electrical, and optical properties have been observed. The detectors are fabricated using high quality synthetic CVD single crystal diamond using the p-type/intrinsic/Schottky metal/L6iF layered structure recently proposed by Marinelli et al. [Appl. Phys. Lett. 89, 143509 (2006)], which allows simultaneous detection of thermal and fast neutrons. Neutron radiation hardness up to at least 2×1014 n/cm2 fast (14 MeV) neutron fluence has been confirmed so far [see Pillon et al., (Fusion Eng. Des. 82, 1174 (2007)]. However, at the much higher neutron fluence of ∼2×1016 neutrons/cm2 damage is observed. The detector response to 5.5 MeV A241m α-particles still shows a well resolved α-peak, thus confirming the good radiation hardness of the device but a remarkable degradation and a significant instability with time of charge collection efficiency and energy resolution arise. Symmetric, nearly Ohmic I-V (current-voltage) characteristics have been recorded from the metal/intrinsic/p-doped diamond layered structure, which before neutron irradiation acted as a Schottky barrier diode with a strong rectifying behavior. The nature and the distribution of the radiation induced damage have been deeply examined by means of cathodoluminescence spectroscopy. A more heavily damaged area into the intrinsic diamond at the same position and with the same extension of the L6iF layer has been found, the increased damage being ascribed to the highly ionizing particles produced in the L6iF layer by thermal neutrons through the nuclear reaction L6i(n,α)T.

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“…In a subsequent work, also the dipole-dipole resonant energy transfer from NV 0 centers to neutral substitutional nitrogen was investigated in detail. 47 Several previous works report extensively about the effect on the intensity of NV centers of structural defects induced from neutron, 58 electron, 59 and ion 16 irradiation, and it is natural to assume that also the center lifetime is affected by radiation-induced damage. While a 2-MeV electron irradiation at a fluence of 2 × 10 18 cm −2 does not seem to have significant effects on the center lifetime, 40 in the present work we report a systematic investigation on the effect of ion implantation on NV center lifetime in samples characterized by different substitutional nitrogen concentrations.…”

Section: Theorymentioning

confidence: 99%

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

et al. 2013

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We report on the systematic characterization of photoluminescence (PL) lifetimes in NV − and NV 0 centers in 2-MeV H + -implanted type Ib diamond samples by means of a time-correlated single-photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e., laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e., laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasiexponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.

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3H luminescence in electron-irradiated diamond samples and its relationship to self-interstitials

Cited by 69 publications

References 11 publications

Laser-Induced Transformation of 3H Defects in Diamond

Laser-Induced Transformation of 3H Defects in Diamond

Characterization of damage induced by heavy neutron irradiation on multilayered L6iF-single crystal chemical vapor deposition diamond detectors

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

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