3D modelling of a reverse cell made with improved multicrystalline silicon wafers

Dugas, J.

doi:10.1016/0927-0248(94)90257-7

Cited by 39 publications

(29 citation statements)

References 7 publications

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“…While proceeding by the separation method of the variables used by [19], we can set: The general solution of the excess minority carriers density is then given by:…”

Section: ( ) L T Is the Electron Diffusion Length In The Base;mentioning

confidence: 99%

Analysis of T-Coefficients Using the Columnar Cylindrical Orientation of Solar Cell Grain

Leye¹,

Fall²,

Mbodji³

et al. 2018

SGRE

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We report the study of the temperature dependance of the performance electronic parameters of an N-P solar cell by considering as model, the columnar cylindrical orientation associated to the dynamic junction velocity (SF) concept. We presented the photocurrent-photovoltage (I-V) and Power-photovoltage (P-V) characteristic curves. The short-circuit photocurrent (I sc ), the open circuit photovoltage (U oc ), the fill factor (FF) and the efficiency (η) are linearly dependent on the temperature. The temperature coefficients (T-coefficient) relative to the short-circuit, open-circuit photovoltage and efficiency are calculated and the comparison with data from the literature showed the accuracy of the considered model.

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“…While proceeding by the separation method of the variables used by [19], we can set: The general solution of the excess minority carriers density is then given by:…”

Section: ( ) L T Is the Electron Diffusion Length In The Base;mentioning

confidence: 99%

Analysis of T-Coefficients Using the Columnar Cylindrical Orientation of Solar Cell Grain

Leye¹,

Fall²,

Mbodji³

et al. 2018

SGRE

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“…(i) e grain has a parallelepipedic form with the same electronic and electrical parameters like the solar cell [2,3]. (ii) e recombination velocity S gb at grain boundaries is constant and independent of illumination, while the grain boundaries are perpendicular to the junction [2]. (iii) e low doped p-type base is quasi-neutral so that the crystalline electric field in the base of the solar cell can be neglected [4].…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Propagation of Electromagnetic Wave into an Illuminated Polysilicon PV Cell

Barandja

Zouma

Mackpayen

et al. 2020

International Journal of Antennas and Propagation

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e increasing cohabitation between telecommunication antennas generating electromagnetic waves and solar panels poses the problem of interaction between these radio waves and solar cells. In order to study the effect of radio waves on the performance of a polycrystalline silicon solar cell in a three-dimensional approach, it is necessary to assess the attenuation of the radio wave in the illuminated polysilicon grain and also to find the expressions of its components. is work investigated the attenuation of radio waves into a polycrystalline silicon grain by analyzing, firstly, the behaviour of the penetration length of the radio waves into the polysilicon grain and secondly, the behaviour of the attenuation factor. e propagation of the radio waves into the polycrystalline silicon grain can be considered without attenuation that can be neglected.

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“…• the grain boundaries are perpendicular to the junction and their recombination velocity S gb is constant along the grain boundaries and independent of illumination up to AM 1 [20] so under AM 1.5 which is the standard spectrum for measuring the efficiency of solar cells used on the surface of the earth [21]; • the grain and by extrapolation the polycrystalline silicon solar cell have a high n-type doped emitter so that the contribution on the performance of the cell comes from the p-type base region [18];…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…The expression of the photocurrent density at the junction of the polycrystalline silicon grain is given by Equation (3) [20]: The expression of the photovoltage across the junction of the polycrystalline silicon grain is expressed using Boltzmann's relation [14]:…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

Sourabié¹,

Zerbo²,

Zoungrana³

et al. 2017

SGRE

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The aim of this work is to investigate, with a three-dimensional steady-state approach, the effect of the incidence angle of a magnetic field on the performance of a polycrystalline silicon solar cell under multispectral illumination. The magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power, of a grain of the polycrystalline silicon solar cell. The influence of the incidence angle of the magnetic field on the diffusion coefficient, the short-circuit photocurrent density, the open-circuit photovoltage and the electric power-photovoltage is studied. Then, the curves of the electric power-photovoltage is used to find the maximum electric power allowing to calculate, according to the incidence angle of the magnetic field, the fill factor and the conversion efficiency. The study has shown that the increase of the incidence angle of the magnetic field from 0 rad to π/2 rad, can reduce the degradation of the performance of solar cells.

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3D modelling of a reverse cell made with improved multicrystalline silicon wafers

Cited by 39 publications

References 7 publications

Analysis of T-Coefficients Using the Columnar Cylindrical Orientation of Solar Cell Grain

Analysis of T-Coefficients Using the Columnar Cylindrical Orientation of Solar Cell Grain

Propagation of Electromagnetic Wave into an Illuminated Polysilicon PV Cell

Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

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