3D Modeling of electromigration combined with thermal–mechanical effect for IC device and package

Liu, Yong; Liang, Lihua; Irving, S.; Luk, Timwah

doi:10.1016/j.microrel.2008.03.021

Cited by 75 publications

(22 citation statements)

References 11 publications

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“…Furthermore every solder joint is composed of several grains with different orientations. In agreement with literature [22,16] averaged values for the young modulus of SAC305 were used to describe the global influence of the packages on the stress load of the solder joints.…”

Section: Materials Propertiesmentioning

confidence: 94%

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Electro- and thermo-migration induced failure mechanisms in Package on Package

Meinshausen

Weide‐Zaage²,

Frémont³

2012

Microelectronics Reliability

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Section: Materials Propertiesmentioning

confidence: 94%

“…During previous investigations [8] the stress values in SAC305 were quite above the yield stress of 35 MPa [18]. Hence the viscoplastic behavior of the solder has to be considered to avoid unrealistic high stress values [9,16]. For the calculation of the viscoplastic deformation the ANAND model, implemented in ANSYS Ò , was used.…”

Section: Stress Distributionmentioning

confidence: 99%

Electro- and thermo-migration induced failure mechanisms in Package on Package

Meinshausen

Weide‐Zaage²,

Frémont³

2012

Microelectronics Reliability

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“…The following boundary conditions are applied: on one end of the electrical connection, the voltage potential is set grounded (zero), while the other end is given as a lumped current load of ±1.7A [7]. The ambient temperature surrounding the test structure is 50°C, and the convective heat transfer coefficient is 20 W/m 2 ºC.…”

Section: Finite Element Modelsmentioning

confidence: 99%

“…However, singularity problems were not addressed. Liu et al [7] adopted a similar methodology to investigate the electromigration due to EM, TM and SM in solder joints for both SnPb and SnAgCu alloys. From the results of finite element simulations, both TM and SM make contributions to the electromigration failures.…”

Section: Introductionmentioning

confidence: 99%

Some remarks on finite element modeling of electromigration in solder joints

Dandu

Fan

Liu

2010

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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This paper investigates several issues in finite element modeling of electromigration in solder joints: current density and thermal stress singularities; negative divergences of atomic fluxes due to electron current and thermal stresses; and submodeling accuracy. A copper post wafer level package is used as a test vehicle for simulation. Coupled electrical-, thermal-, and mechanical finite element modeling is performed. Results show that the values of maximum current density in solder balls significantly depend on finite element mesh sizes, indicating a singularity exists. Negative values of the divergences of atomic fluxes due to electron current and thermal stresses are obtained under certain loading conditions. Submodeling presents accurate results if cut boundary is appropriately chosen.

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“…The design complexity of 3D ICs introduces an increased sensitivity of operation and reliability due to the thermomechanical interactions among their multilevel components [29]. Therefore, mechanical modeling has become a critical consideration in the design phase of 3D ICs to manage and reduce these sensitivities, and to increase yield and reliability [12,14,31]. Progress has been made in the simulation of the thermomechanical response of 3D ICs, primarily utilizing finite element methods in two and three dimensions [2,3,6,8,18].…”

mentioning

confidence: 99%

Thermomechanical modeling of back-end-of-the-line 3D interconnects

Massad

Bauer

Shindé

2009

2009 59th Electronic Components and Technology Conference

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Three-dimensional (3D) integrated circuits (ICs) offer considerable advantages over traditional 2D IC designs by offering increased signal speeds and lower operation power, and by combining multiple technology functions in a lowvolume, stacked design. The design complexity of 3D ICs introduces an increased sensitivity of operation and reliability due to the thermomechanical interactions among their multilevel components. Therefore, physical modeling has become a critical task in the design phase of 3D ICs to manage and reduce these sensitivities, and to increase yield and reliability. In this paper, we develop and employ a high-fidelity, 3D finite element modeling framework to examine the thermomechanical response of 3D IC interconnects. We demonstrate attributes of our framework on a back-end-ofthe-line via chain. First, we generate geometry using process definitions, develop a parameterized mesh, and identify material parameters from characterization experiments. Then, using advanced, massively parallel computational resources, we simulate fabrication steps to approximate the stresses and deformations experienced by the microstructure as a result of processing temperatures. Ultimately, our modeling approach provides a capability to assess the thermomechanical response of 3D IC components and provides a basis for designing structures robust to fabrication and processing variations. IntroductionThree-dimensional (3D) integrated circuits (ICs) offer considerable advantages by offering increased signal speeds and lower operation power, and by combining multiple technology functions in a low-volume stacked design. Threedimensional integration increases the number of potential inter-chip interconnections while reducing interconnection complexity and cost. The design complexity of 3D ICs introduces an increased sensitivity of operation and reliability due to the thermomechanical interactions among their multilevel components [29]. Therefore, mechanical modeling has become a critical consideration in the design phase of 3D ICs to manage and reduce these sensitivities, and to increase yield and reliability [12,14,31]. Progress has been made in the simulation of the thermomechanical response of 3D ICs, primarily utilizing finite element methods in two and three dimensions [2,3,6,8,18].In this paper, we develop and employ a high-fidelity, 3D finite element modeling framework to examine the thermomechanical response of 3D IC interconnects. The modeling process involves three primary steps. In the first, we generate a highly detailed, parameterized geometrical representation of the structure. To accommodate all design features, we use the design layout files and process definitions

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3D Modeling of electromigration combined with thermal–mechanical effect for IC device and package

Cited by 75 publications

References 11 publications

Electro- and thermo-migration induced failure mechanisms in Package on Package

Electro- and thermo-migration induced failure mechanisms in Package on Package

Some remarks on finite element modeling of electromigration in solder joints

Thermomechanical modeling of back-end-of-the-line 3D interconnects

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