3D Lifetime Tomography Reveals How CdCl<sub>2</sub> Improves Recombination Throughout CdTe Solar Cells

Barnard, Edward S.; Ursprung, Benedikt; Colegrove, Eric; Moutinho, H. R.; Borys, Nicholas J.; Hardin, Brian E.; Peters, Craig H.; Metzger, Wyatt K.; Schuck, P. James

doi:10.1002/adma.201603801

Cited by 40 publications

(31 citation statements)

References 23 publications

(46 reference statements)

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“…Other researchers observed the recrystallization first happen at CdTe grain boundaries during chlorine activation [20], and those small CdTe that appear to recrystallize at the grain boundaries could be explained by these bridging areas in the simulation results. Most CdCl 2 tend to accumulate rather than inter-diffuse with CdTe, this result is consistent with the experimental observations [21]. Those white pixels in CdTe grains are not caused by diffusion, but are originally in the grain boundary position, gradually surrounded by CdTe pixels, it is extremely hard for these CdCl 2 pixels to leave CdTe lattice by inter-diffusion.…”

Section: Experiments and Simulationssupporting

confidence: 90%

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Zhu

Liu

Zhang

et al. 2020

Mater. Res. Express

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In this work we studied the grain growth and orientation change of CdTe multi-crystallize thin films during chlorine activation. A thermodynamic energy criterion is proposed for finding non-toxic substitutes of cadmium chloride and tested by Monte-Carlo simulation method combined with CASTEP calculation and annealing algorithm. Visualized pixel images of simulation results are in good agreement with experimental results. The mechanism of cadmium chloride for chlorine activation is explained from the aspect of thermodynamics. Predictions of non-toxic chloride substitutes for toxic cadmium chlorine and corresponding annealing routes are given based on the proposed energy criterion and energy calculation results.

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Section: Experiments and Simulationssupporting

confidence: 90%

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Zhu

Liu

Zhang

et al. 2020

Mater. Res. Express

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“…Figure 7 shows the carrier concentration vs depletion width for samples subjected to a CdCl 2 treatment prior to group V diffusion. The CdCl 2 treatment helps improve intragrain quality showing better crystallinity, longer grain interior lifetimes, and a reduced number of twin-boundaries [35][36][37]. This improvement in material quality can help increase activation by reducing defects that may getter group V atoms.…”

Section: Hole Densitymentioning

confidence: 99%

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

Colegrove

Yang

Harvey

et al. 2018

J. Phys. D: Appl. Phys.

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Fundamental material doping challenges have limited CdTe electro-optical applications. In this work, the As atomistic diffusion mechanisms in CdTe are examined by spatially resolving dopant incorporation in both single-crystalline and polycrystalline CdTe over a range of experimental conditions. Densityfunctional theory calculations predict experimental activation energies and indicate As diffuses slowly through the Te sublattice and quickly along GBs similar to Sb. Because of its atomic size and associated defect chemistry, As does not have a fast interstitial diffusion component similar to P. Experiments to incorporate and activate P, As, and Sb in polycrystalline CdTe are conducted to examine if ex-situ Group V doping can overcome historic polycrystalline doping limits. The distinct P, As, and Sb diffusion characteristics create different strategies for increasing hole density. Because fast interstitial diffusion is prominent for P, less aggressive diffusion conditions followed by Cd overpressure to relocate the Group V element to the Te lattice site is effective. For larger atoms, slower diffusion through the Te sublattice requires more aggressive diffusion, however further activation is not always necessary. Based on the new physical understanding, we have obtained greater than 10 16 cm -3 hole density in polycrystalline CdTe films by As and P diffusion.

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“…Furthermore, the study of interface defects and its recombination velocity is important for all types of solar cells like dye-sensitized solar cells, [7,8] CdTe, [9,10] and perovskite solar cells, [11][12][13][14] as an example. Hence, the study of interface passivation is of the utmost importance if we want to design new CIGS device architectures that permit achieving even higher levels of electrical performance.…”

Section: Introductionmentioning

confidence: 99%

Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer

Salomé

Vermang

Ribeiro‐Andrade

et al. 2017

Adv Materials Inter

110

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Thin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.

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3D Lifetime Tomography Reveals How CdCl₂ Improves Recombination Throughout CdTe Solar Cells

Cited by 40 publications

References 23 publications

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer

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3D Lifetime Tomography Reveals How CdCl2 Improves Recombination Throughout CdTe Solar Cells

Cited by 40 publications

References 23 publications

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Monte Carlo simulation of CdTe thin film recrystallization process during chlorine activation

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer

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3D Lifetime Tomography Reveals How CdCl₂ Improves Recombination Throughout CdTe Solar Cells