3D irradiation results

Betta, Gian-Franco Dalla

doi:10.22323/1.167.0014

Cited by 4 publications

(4 citation statements)

References 18 publications

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“…The process fabricates about 10 μm diameter columns by etching, followed by a 1 μm polysilicon layer covering the inside of the etched holes, then passivated by a wet oxide [63]. In addition the sensor edges can be fabricated with active edge implants thus rendering sensors with an unrivaled active area fraction [65]. More details on etching holes into silicon can be found in section 3.5.…”

Section: D-si Sensorsmentioning

confidence: 99%

A review of advances in pixel detectors for experiments with high rate and radiation

Garcia-Sciveres¹,

Wermes²

2018

Rep. Prog. Phys.

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The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

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Section: D-si Sensorsmentioning

confidence: 99%

A review of advances in pixel detectors for experiments with high rate and radiation

Garcia-Sciveres¹,

Wermes²

2018

Rep. Prog. Phys.

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“…By doing so, the maximum electric field peak is moved to the front side, where it can be lowered by layout (e.g., by using field plates [10,23]), so that the breakdown voltage is increased. However, the presence of 2016 JINST 11 P09006 high electric fields at the n + column tips as the bias voltage is increased should also be considered in DTC5 diodes: from TCAD simulations, this is expected to be a major concern for breakdown at voltages of the order of 250 V [4,37,38].…”

Section: Before Irradiationmentioning

confidence: 99%

“…This is a key feature inherently making 3D sensors radiation hard: the inter-electrode spacing can be made small enough to suppress the effect of charge carrier trapping on the signal efficiency even for very large radiation fluences, as also demonstrated by simple geometrical considerations [3]. In the past few years, outstanding results in terms of radiation tolerance have been reported for 3D sensors fabricated by different manufacturers, independently of the specific design and technology choices (see [4] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

et al. 2016

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We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details. K: Radiation-hard detectors; Solid state detectors; Detector design and construction technologies and materials; Radiation damage to detector materials (solid state) 1Corresponding author.

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“…For instance, 3D pixels (read-out by the same FE-I4 chip) have a capacitance of about 200 fF and nonetheless can achieve a noise level of only 150 e. r.m.s. [9].…”

Section: Pixel Capacitancementioning

confidence: 99%

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

et al. 2014

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In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

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3D irradiation results

Cited by 4 publications

References 18 publications

A review of advances in pixel detectors for experiments with high rate and radiation

A review of advances in pixel detectors for experiments with high rate and radiation

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

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