2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) 2016
DOI: 10.1109/dtip.2016.7514895
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3D-fractal engineering based on oxide-only corner lithography

Abstract: This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded si… Show more

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Cited by 10 publications
(23 citation statements)
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“…However, a non-random quasi-exact fractal size distribution could be seen over the smallest and largest octahedral features (Figure S2). Interestingly, relatively high surface-area-to-volume ratios between 1.1 and 1.6 per fractal unit in Figure 1b-e were obtained [46,47]. These units could then be expanded over larger areas forming arrays of defined interspaces (i) and heights (h) over different lattice configurations.…”
Section: Caf Response To Topographic Surfaces Of Increasing Complexitymentioning
confidence: 94%
See 1 more Smart Citation
“…However, a non-random quasi-exact fractal size distribution could be seen over the smallest and largest octahedral features (Figure S2). Interestingly, relatively high surface-area-to-volume ratios between 1.1 and 1.6 per fractal unit in Figure 1b-e were obtained [46,47]. These units could then be expanded over larger areas forming arrays of defined interspaces (i) and heights (h) over different lattice configurations.…”
Section: Caf Response To Topographic Surfaces Of Increasing Complexitymentioning
confidence: 94%
“…Details on the fabrication process of the topographies in Figure 1 are presented in the supporting information, which can be found in the section named fabrication of the topographical surfaces. A similar fabrication process as described in [46,47] was followed for the planar substrates used as controls. In short, planar substrates involved the growth of SiO 2 over a silicon wafer, which was then bonded to the glass.…”
Section: Topographical Surfacesmentioning
confidence: 99%
“…The method of engineering of a 3D-fractal structure is based on a combination of anisotropic etching of silicon and corner lithography [ 17 , 18 ]. Basically, a silicon (Si) wafer with thermally grown SiO 2 was patterned in buffered hydrofluoric acid (BHF) using a resist mask with a regular pattern of holes (25 μm diameter and 25 μm periodicity).…”
Section: Methodsmentioning
confidence: 99%
“…Oxide-only corner lithography 28 was applied to fabricate the structures shown in the second column of Fig. 7.…”
Section: Fabrication and Visualization Of Repeated 3d Structuresmentioning
confidence: 99%