2021
DOI: 10.1039/d1na00127b
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3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective

Abstract: A nanostructure of In0.18Ga0.82N/GaN multiple quantum well (MQW) nanorods (NRs) was fabricated using top-down etching with self-organized nickel (Ni) nanoparticles as masks on the wafer. The optical properties of In0.18Ga0.82N/GaN...

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“…Figure 1B shows the 3D side view of Al x Ga 1‐x N NRs arranged vertically with a plane wave as incident light on the top of the NRs. Geometric parameters of the arrays consist of length (L) of 1 μm on the basis of former studies, 18–21 diameter (D) and pitch (P) defined as the center‐to‐center distance of the NRs shown in Figure 1C. The absorptance (A[λ]) of NRAs can be calculated according to: normalA()λgoodbreak=1goodbreak−normalR()λgoodbreak−normalT0.25em()λ, …”
Section: Optical Modelmentioning
confidence: 99%
“…Figure 1B shows the 3D side view of Al x Ga 1‐x N NRs arranged vertically with a plane wave as incident light on the top of the NRs. Geometric parameters of the arrays consist of length (L) of 1 μm on the basis of former studies, 18–21 diameter (D) and pitch (P) defined as the center‐to‐center distance of the NRs shown in Figure 1C. The absorptance (A[λ]) of NRAs can be calculated according to: normalA()λgoodbreak=1goodbreak−normalR()λgoodbreak−normalT0.25em()λ, …”
Section: Optical Modelmentioning
confidence: 99%