2007
DOI: 10.1016/j.jcrysgro.2006.12.075
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3D dynamic mesh numerical model for multi-crystalline silicon furnaces

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Cited by 31 publications
(23 citation statements)
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“…Many studies on optimization of a unidirectional process of crystalline silicon for solar cells have been carried out [3][4][5][6][7][8][9][10][11]. Liu calculated time-dependent distribution of iron and temperature [3], carbon concentration and SiC particle precipitation [4] in a silicon ingot.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Many studies on optimization of a unidirectional process of crystalline silicon for solar cells have been carried out [3][4][5][6][7][8][9][10][11]. Liu calculated time-dependent distribution of iron and temperature [3], carbon concentration and SiC particle precipitation [4] in a silicon ingot.…”
Section: Introductionmentioning
confidence: 99%
“…The melt-solid interface shapes of a silicon ingot in unidirectional solidification and casting processes were studied by Vizman et al [5] and Miyazawa et al [6,7]. The relative movement of various parts of furnace was considered in a global 3D time-dependent numerical simulation by Delannoy et al [8]. Two major types of casting furnaces, direct solidification system (DSS) and heat exchange method (HEM) system, have been compared from the aspects of thermal field, crystal quality and shear stress field by Wu et al [9].…”
Section: Introductionmentioning
confidence: 99%
“…Numerical simulations are widely used to reveal transport phenomena in the growth system, such as temperature and impurity distributions in the furnace. Delannoy et al [11], and Mangelinck-Noel and Duffar [12] developed a 3D global model considering relative movements of various parts in the furnace. The model was applied to study the effect of system geometry on the efficiency of energy usage by the growth system.…”
Section: Hot Zone Design and Process Optimizationmentioning
confidence: 99%
“…Teng et al [3] studied carbon impurity transport and found that carbon impurity is easily accumulated near the central region due to natural convection, and a convex interface is preferably formed. Delannoy et al [4] developed a 3D dynamic model to simulate and optimize silicon ingot growth of an ECM furnace. Their predictions agree well with the experimental results.…”
Section: Introductionmentioning
confidence: 99%