360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range

Rico-Aniles, Hector Daniel; Ramírez-Angulo, J.; López-Martín, Antonio J.; Carvajal, R.G.

doi:10.1109/tcsii.2020.2968246

Cited by 16 publications

(12 citation statements)

References 19 publications

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“…The high-resistance and small-capacitance values will result in high value of and small value of . Using (17), the denominator of the transfer function of the universal filter can be expressed as…”

Section: Non-ideal Analysismentioning

confidence: 99%

“…Thus, all the incremental parametric sensitivities for parameters and are below 1. Using (17), the characteristic equation of a quadrature oscillator can be written as…”

Section: Non-ideal Analysismentioning

confidence: 99%

“…A simple structure of MI−OTA, using one differential pair, can be achieved by employing the multiple-input floating−gate transistor (MIFG) [16]. Nevertheless, the MIFG transistor is based on charge conversation making it unpractical with modern CMOS technologies that suffer from gate leakage [17]. Furthermore, the MIFG transistor suffers from a residual charge on its gate, that results in higher voltage offset compared to conventional design.…”

Section: Introductionmentioning

confidence: 99%

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Multiple-Input Universal Filter and Quadrature Oscillator Using Multiple-Input Operational Transconductance Amplifiers

et al. 2021

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This paper presents a new multiple-input single−output voltage-mode universal biquad filter based on multiple−input operational transconductance amplifiers (MI-OTA). This work demonstrates that the multiple-input OTA−based universal filter can provide more filtering responses and other benefits, compared to conventional OTA−based one. The filter provides electronic and orthogonal control of the natural frequency and the quality factor. Furthermore, a two-phase quadrature oscillator can be obtained by slightly modifying the proposed universal filter while the condition and frequency of oscillation can be controlled orthogonally and electronically. The performance of the proposed circuit is evaluated in Cadence environment using the TSMC 0.18 µm CMOS technology. The voltage supply is 1.2 V and the power dissipation of the MI−OTA is 24 µW. For 1% third intermodulation distortion (IMD3) the dynamic range of the band−pass filter is 78.6 dB. In addition, the proposed filter and oscillator are investigated through experiment tests using LM13700 commercially available OTA.

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Section: Non-ideal Analysismentioning

confidence: 99%

“…Thus, all the incremental parametric sensitivities for parameters and are below 1. Using (17), the characteristic equation of a quadrature oscillator can be written as…”

Section: Non-ideal Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multiple-Input Universal Filter and Quadrature Oscillator Using Multiple-Input Operational Transconductance Amplifiers

et al. 2021

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“…The transconductor in [32] offers only single input that limits its applications. The transconductors in [33][34][35][36][37][38][39] offer differential input, however, these CMOS structures are constructed by two voltage to current (V-I) conversion units (VF or current conveyor) that increase the chip area and the total power consumption. The transconductor in [40] offers differential input with single V-I conversion unit based on promising structure of differential difference current conveyor (DDCC).…”

Section: The Multiple-input Transconductance Stagementioning

confidence: 99%

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor

et al. 2021

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This paper presents a new voltage-mode elliptic band-pass filter based on a multiple-input transconductor (MI-OTA). The MI-OTA's structure employs the multiple-input MOS transistor technique that simply enables to increase the number of OTA's inputs without increasing the number of current branches or the differential pairs. The MI-OTA features high linearity over a wide input range with a compact and simple CMOS structure. From the advantage of multiple inputs, it enables to construct the arbitrarily summing and subtracting under the proposed voltage-mode filter design procedure. The filter is designed and simulated in Cadence environment using 0.18 µm TSMC CMOS technology. The filter offers 72.9 dB dynamic range for 2 % total harmonic distortion (THD) for sine input signal of 0.5 Vpp @ 1kHz with voltage supply ± 0.9V. The simulation results of the filter are in agreement with the RLC prototype. The experimental results using commercially available IC are also included to confirm the proposed filter that are in good agreement with the simulation results. INDEX TERMSElliptic filter, Band-pass filter, Transconductor, Multiple-input OTA Computer, Telecommunications and Information Technology (ECTI-CON 2020) of an AEÜ -International Journal of Electronics and Communications. He is a senior member of IEEE, USA. KHUNANON KARAWANICH received his B.Eng. in Electrical Engineering from Faculty of Engineering, Silpakorn university, Thailand in 2018. He is pursuing his M.Eng. degree in Telecommunications Engineering from KMITL. His research interests are focusing in communication circuits and systems, analog signal processing, and chaotic system designs.

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“…Consequently, the selection of suitable and simple design for very LVs power supplies and high-performance specifications CMOS Op-Amp circuits is very crucial because their performance specifications directly affect the overall performance specifications of the analog and mixed-signal ICs. The minimum and maximum input common-mode ( , respectively) and differential-mode range voltages in the classical CMOS gate-driven (GD) Op-Amp circuits topologies are relatively small and greatly influenced by the power supplies' voltages [14]. To overcome these shortcomings, several promising very LVs power supplies' design techniques have introduced to increase the and values of the very LVs power supplies and highperformance specifications CMOS Op-Amp circuits topologies.…”

Section: Introductionmentioning

confidence: 99%

Design of very low-voltages and high-performance CMOS gate-driven operational amplifier

AL-Qaysi

Jasim

Hameed

2020

IJEECS

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This paper presents the description and analysis of the design and HSPICE-based simulation results of very low-voltages (LVs) power supplies and high-performance specifications CMOS gate-driven (GD) operational amplifier (Op-Amp) circuit. The very LVs CMOS GD Op-Amp circuit designed using 90nm CMOS technology parameters and the folded cascode (FC) technique employed in the differential input stage. The HSPICE simulation results demonstrate that the overall gain is 73.1dB, the unity gain bandwidth is 14.9MHz, the phase margin is , the total power dissipation is 0.91mW, the output voltage swing is from 0.95V to 1V, the common-mode rejection ratio is dB, the equivalent input-referred noise voltage is 50.94 at 1MHz, the positive slew rate is 11.37 , the negative slew rate is 11.39 , the settling time is 137 , the positive power-supply rejection ratio is 74.2dB, and the negative power-supply rejection ratio is 80.1dB. The comparisons of simulation results at 1V and 0.814V power supplies’ voltages of the very LVs CMOS GD Op-Amp circuit demonstrate that the circuit functions with perfect performance specifications, and it is suitable for many considerable applications intended for very LVs CMOS Op-Amp circuits.

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360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range

Cited by 16 publications

References 19 publications

Multiple-Input Universal Filter and Quadrature Oscillator Using Multiple-Input Operational Transconductance Amplifiers

Multiple-Input Universal Filter and Quadrature Oscillator Using Multiple-Input Operational Transconductance Amplifiers

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor

Design of very low-voltages and high-performance CMOS gate-driven operational amplifier

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