36.3: Development of 192‐Output SOI PDP Address Driver IC with Over Temperature Detection Circuit

Abstract

We have developed 192 outputs PDP address driver IC, uPD16347 with the over temperature detection circuit. This IC uses bonded SOI wafer and trench process for dielectric isolation. This IC has the 0.5μm design rule CMOS logic circuit and 80V high withstand voltage CMOS output circuit. Also, this IC uses the TCP that is expected to become the mainstream of package technology for future PDP address driver IC. However, it is difficult to use TCP for PDP address driver IC because of large power dissipation to drive PDP. Therefore we have developed the over temperature detection circuit for this product. By using this function it becomes possible to detect the over temperature condition of the driver IC.