35-GHz Intrinsic Bandwidth for Direct Modulation in 1.3-&amp;lt;tex&amp;gt;$mu$&amp;lt;/tex&amp;gt;m Semiconductor Lasers Subject to Strong Injection Locking

Hwang, Sheng-Kwang; Liu, J.M.; White, J.K.

doi:10.1109/lpt.2004.824627

Cited by 92 publications

(41 citation statements)

References 9 publications

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“…This is because that by using the injection-locking technique, variety of ultra-fast optical components or sys tems can be designed, such as simultaneous repolarization polarization-scrambled wavelength channels [1], error-free detection of OC-192 DPSK signal [2], all-optical modula tion format conversion and multicasting [3], optical fre quency modulation and intensity modulation suppression [4], injection locking of VCSELs [5], 35-GHz intrinsic bandwidth for direct modulation in 1.3 lm semiconductor lasers [6], an all-optical switch using a multi-wavelength mutual injection-locked laser diode [7], MEMs injectionlocked laser [8], and all-optical packet demultiplexing using a multi-wavelength mutual injection-locked laser diode [9].…”

Section: Introductionmentioning

confidence: 99%

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Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Jin

Chuang

2006

Solid-State Electronics

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Theory and experiment for dc and small-signal electrical modulation of an injection-locked quantum-well (QW) Fabry-Perot laser are presented. Our experiment is realized by performing side-mode injection locking of a multiple-quantum-well (MQW) InGaAsP FabryPerot (FP) laser, which has the advantage of optical wavelength conversion. We first measure the dc characteristics and optical spectra of an injection-locked laser to define its locking range and linewidth enhancement factor. We then show experimentally that the bandwidth of an injection-locked semiconductor laser is 10.5 GHz, which is around twice the free-running electrical modulation bandwidth (5.3 GHz). The relaxation frequency of the injection-locked laser can be 3.5 times greater than the free-running value. Our theoretical model includes mode competition, gain saturation, low frequency roll-off, and optical confinement factor of the QW structure. The the ory shows good agreement with our experimental results. We point out that the small-signal modulation of injection-locked lasers still suffers severely from low frequency roll-off, which comes from the carrier transport effect and parasitic effect of the bias circuit. If we can reduce those effects, the modulation bandwidth can be further increased to 15 GHz, which is around 3 times of the free-running value.

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Section: Introductionmentioning

confidence: 99%

“…The electrical modulation of injection-locked lasers is one of the hottest topic and attracted considerable attention [5,6,10]. Because it is predicted that the modulation band width of strongly injection-locked semiconductor lasers can be significantly improved compared to free-running electrical modulation [11,12].…”

Section: Introductionmentioning

confidence: 99%

Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Jin

Chuang

2006

Solid-State Electronics

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“…Nevertheless, all of our laser parameters were obtained experimentally. They were extracted from a 1.3-m laser using a four-wave mixing parameter extraction technique [26], [27]. Therefore, we focus on establishing our theoretical results using the realistic simulation results as our reference.…”

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confidence: 99%

Analysis of an Optically Injected Semiconductor Laser for Microwave Generation

Chan

2010

IEEE J. Quantum Electron.

146

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Abstract-The nonlinear dynamical period-one oscillation of an optically injected semiconductor laser is investigated analytically. The oscillation is commonly observed when the injection is moderately strong and positively detuned from the Hopf bifurcation boundary. The laser emits continuous-wave optical signal with periodic intensity oscillation. Since the oscillation frequency is widely tunable beyond the relaxation oscillation frequency, the system can be regarded as a high-speed photonic microwave source. In this paper, analytical solution of the oscillation is presented for the first time. By applying a two-wavelength approximation to the rate equations, we obtain mathematical expressions that characterize the oscillation. The analysis explains the physical origin of the periodic intensity oscillation as the beating between two wavelengths, namely, the injected wavelength and the cavity resonance wavelength. As the injection strength increases, the optical gain reduces, the cavity is red-shifted through the antiguidance effect, and so the beat frequency increases continuously. The theoretical analysis is useful for designing the system for photonic microwave applications.

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“…The microwave gain saturation decreases further as the detuning decreases to 5.3 GHz. At 12.1 GHz, the slave laser is well within the stable locking region, and the modulation response is similar to that of a free-running laser with enhanced bandwidth and has a linear gain [18]. In the stable locking region, the optoelectronic feedback can be reintroduced to form an OEO.…”

Section: Linewidth Narrowing Effectsmentioning

confidence: 86%

Tunable Narrow-Linewidth Photonic Microwave Generation Using Semiconductor Laser Dynamics

Chan

Liu

2004

IEEE J. Select. Topics Quantum Electron.

143

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Abstract-Generation of a broadly tunable narrow-linewidth microwave subcarrier on an optical wave by exploiting the nonlinear dynamics of a semiconductor laser through a proper combination of optical injection and optoelectronic feedback is experimentally demonstrated. The microwave frequency is generated by the period-one oscillation of an optically injected semiconductor laser. It is tuned in the range from 10 to 23 GHz by varying the optical injection strength, and its linewidth can be narrowed by optoelectronic feedback alone. The linewidth is reduced from the range of 40-120 MHz without stabilization by three orders of magnitude to the range of 10-160 kHz with stabilization through optoelectronic feedback alone. The effect of a small microwave modulation is also investigated. It reduces the linewidth to below the 1-kHz resolution limit of our instrument.

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35-GHz Intrinsic Bandwidth for Direct Modulation in 1.3-<tex>$mu$</tex>m Semiconductor Lasers Subject to Strong Injection Locking

Cited by 92 publications

References 9 publications

Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Analysis of an Optically Injected Semiconductor Laser for Microwave Generation

Tunable Narrow-Linewidth Photonic Microwave Generation Using Semiconductor Laser Dynamics

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