35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology

Mahon, Simon J.; Dadello, A.; Fattorini, Anthony P.; Bessemoulin, A.

doi:10.1109/mwsym.2008.4632967

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…Furthermore, by contrast, the empirical formula Eq. (1) proposed in this paper is almost exactly in accordance with the experimental data, as shown in Fig. 10.…”

Section: Experimental Studysupporting

confidence: 87%

“…Because of its inherent merits such as low noise, low on-resistance, high power, and high frequency operation, AlGaAs/InGaAs pHEMT has been demonstrated to be able to fulfill the high requirements for the fourth generation wireless communications technology. [1] Due to the harsh demands of the commercial and especially military applications, the reliability of the Al-GaAs/InGaAs pHEMT is naturally a key matter that attention must be paid to. The degradation effect of pHEMT devices, [2][3][4][5] such as hot carrier degradation, has been studied.…”

Section: Introductionmentioning

confidence: 99%

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Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

et al. 2015

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The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results.

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“…Furthermore, by contrast, the empirical formula Eq. (1) proposed in this paper is almost exactly in accordance with the experimental data, as shown in Fig. 10.…”

Section: Experimental Studysupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

et al. 2015

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“…ALLIUM arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs) are the leading active devices for power amplifiers in microwave and millimeter wave frequency range [1]. In recent years, gallium nitride (GaN) HEMT technology is shown to be superior to GaAs pHEMT technology in terms of performance [2].…”

Section: Introductionmentioning

confidence: 99%

“…TriQuint Semiconductor is a key supplier of conventional Ka-band MMICs using 0.15 µm gate length GaAs pHEMT technology. The maximum output power of the state-of-the-art Ka-Band GaAs pHEMTs, including TriQuint's device, is typically around 0.5-0.8 W/mm [1,3]. The power performance is mainly limited due to device breakdown voltage which in turn restricts the maximum voltage of operation to about 6 V. The limited output power density puts a severe constraint in MMIC design resulting in large chip size and maximum power level Manuscript around 3 to 4 W [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm

Dumka¹,

Kao²,

Beam³

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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We present GaAs pHEMTs demonstrating output power over 1 W/mm in Ka-band at an operating voltage of 8 V. DC, RF and reliability results are reported. Continuous wave load pull tests at 35 GHz show peak power added efficiency of 52 % and associated gain of 8 dB. The saturated output power of 1.2 W/mm is achieved. Power performance improvement is attributed to a new dielectrically defined 0.15 µm gate process which allows successful operation of these devices at a drain voltage of 8 V. Devices also show excellent small signal performance with maximum cut-off frequency as high as 107 GHz at a drain voltage of 1 V. Using three-temperature accelerated DC life tests, activation energy of 1.45 eV and median life time over 1 million hours at a channel temperature of 150 °C are estimated.

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“…In recent years, the GaAs/InGaAs based pseudomorphic quantum well (QW) structures have been successfully applied to design low noise ultra high frequency transistors devices such as modulation doped field effect transistors (MODFETs) [1][2][3]. These hetero-structures are also explored for the possible use to generate and detect the middle mid and far infrared radiation [4].…”

Section: Introductionmentioning

confidence: 99%

Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

et al. 2020

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Non-monotonic mobility μ of electrons is obtained in a pseudomorphic GaAs/InxGa1−xAs high electron mobility transistor having double quantum well structure with asymmetric doping concentrations in the outer barriers. A dip in μ occurs close to the resonance of subband states because of the quantum mechanical transfer of the wave functions between the wells. Near resonance, the asymmetry in subband wave functions and anticrossing of energy levels as a function of doping concentration influence the intra- and intersubband scattering rate matrix elements. Near resonance, the subband wave functions spread asymmetrically and the energy levels exhibit anticrossing as a function of doping concentration thereby influencing the intra and intersubband scattering rate matrix elements. The dip in μ, which amplifies with raise in the asymmetry of the width of wells, is basically due to the subband mobilities limited by the interface roughness scattering. We also show that an appropriate selection of the structure parameters leads to a hump in mobility dominated by the intersubband effects on the screened ionized impurity scattering potential under double subband occupancy. The nonlinearity in μ can be utilized to study the characteristics improvement of devices such as high electron mobility transistors.

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35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology

Cited by 13 publications

References 9 publications

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm

Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

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