Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Abstract

In this work, native GaO x is positioned between bulk gallium and degenerately doped p-type silicon (p + -Si) to form Ga/GaO x /SiO x /p + -Si junctions. These junctions show memristive behavior, exhibiting large current−voltage hysteresis. When cycled between −2.5 and 2.5 V, an abrupt insulator−metal transition is observed that is reversible when the polarity is reversed. The ON/ OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10 8 and retain the ON and OFF resistive states for up to 10 5 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

Sweep-Character-Dependent Switching of the Conductance State in Ferrocene-Substituted Thiofluorene Self-Assembled Monolayers

“…Moreover, in our opinion, the trapping of counter charge in the oxide would be inconsistent with the symmetric J – V characteristics observed for symmetrically sweeping the junctions, as discussed in the Supporting Information of ref . Still, it should be mentioned that there exist inorganic junctions in which the oxide has been held responsible for conductance switching involving the appearance of conduction channels in the oxide, which, however, appears at odds with our observation of a reduced conductance in the switched low conductance state of Fc-FluT.…”

“…Still, it should be mentioned that there exist inorganic junctions in which the oxide has been held responsible for conductance switching involving the appearance of conduction channels in the oxide, 45 which, however, appears at odds with our observation of a reduced conductance in the switched low conductance state of Fc-FluT.…”

Reliable Memristor Based on Ultrathin Native Silicon Oxide

“…It is well-known that Si is one of a few materials whose native oxide will self-limit its growth at a thickness of around 2 nm in ambient conditions. No additional growth past this thickness can be measured even a year later. , To put this in perspective, the self-limiting oxidation naturally forms a large-area, highly uniform, and atomic-thin oxide skin that can be regarded as one of 2D planar materials. − Figure a shows the cross-sectional high-resolution transmission electron microscopy (HRTEM) image of the native SiO x /p ++ -Si. The atomically thin SiO x layer is about 2.7 nm with an amorphous structure, which endows high structural uniformity.…”

Memristor Arrays Formed by Reversible Formation and Breakdown of Nanoscale Silica Layers on Si–H Surfaces

“…Most of the current memristor platforms are based on sandwiching insulating materials between metals in the form of metal–insulator–metal junctions. The insulating material is typically a complex transition metal oxide, for example, manganite, gallium oxide, hafnium oxide, titanates, and zirconates, or oxygen-containing carbon materials, usually exhibiting different resistance states by electrical stimulation. ,− The resistive switching is governed by a voltage-driven oxygen vacancy movement and the formation of conducting filaments. − Memristors have also been reported based on 2D materials. ,− More recently, the intrinsic reversible (soft) breakdown of silicon oxide has been reported. − This has sparked interest because silicon oxide has played a vital role in semiconductor microelectronics due to its ability to form a stable, wide-band-gap insulating material with a near-perfect interface with Si. However, recent studies have shown that silicon oxide is not structurally inert as it is often assumed but undergoes major structural and chemical changes with applied electric fields.…”