310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

Duan, Ning; Liow, Tsung-Yang; Lim, Andy Eu-Jin; Liu, Ding; Lo, Guo‐Qiang

doi:10.1364/oe.20.011031

Cited by 83 publications

(50 citation statements)

References 14 publications

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“…Avalanche operation of germanium-based photodiodes has been demonstrated in separate absorption charge multiplication 3,20 and metal semiconductor metal 4 structures. On the one hand, the first ones exhibit low multiplication noise thanks to the use of Si in the multiplication layer.…”

mentioning

confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

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Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as À 7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than À 26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below À 35 dBm. These results pave the way for low-powerconsumption on-chip communication applications.

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confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

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“…The mesa diameter is 50 µm. The dark current at 95% breakdown is ~ 350 nA, which is approximately 100x lower than that of Ge on Si APDs [18][19][20] and comparable to that of AlInAs/InGaAs APDs. 15,23 The step in the photocurrent near -38 V occurs when the edge of the depletion region reaches the absorbing layer, which is referred as punch-through.…”

Section: Performance and Analysismentioning

confidence: 82%

“…One approach has been to combine a Ge absorption region with a Si multiplication layer in an SACM APD. [18][19][20] These APDs have achieved comparable to the best III-V compound APDs but not superior, as would have been expected owing to their low k value. The reason is that their high dark current, which arises from the lattice mismatch between Ge and Si, contributes enough to the noise to offset the lower excess noise factor.…”

Section: Introductionmentioning

confidence: 90%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

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We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al x In 1-x As y Sb 1-y , grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al 0.7 In 0.3 As 0.3 Sb 0.7 for the multiplication region and Al 0.4 In 0.6 As 0.3 Sb 0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

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“…Slightly beyond 2V, there is avalanche multiplication which increases the responsivity by a gain factor of �2 at 5V [7]. With this effect, higher detector sensitivity can be obtained with a simple pin PD by using a higher operation voltage, as opposed to a more complicated separate absorption-charge multiplication (SACM) avalanche photo detector (APD) structure [4]. Onset of avalanche multiplication is observed for all the devices giving a gain factor of �2 at 5V.…”

Section: Resultsmentioning

confidence: 99%

Performance optimization of waveguided germanium pin photodetector for optical communication applications

Lim

Liow

Duan

et al. 2012

2012 Photonics Global Conference (PGC)

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We investigated the impact of contact engineering for Germanium photodetectors performance optimization. Split contacts increased the PD responsivity by -2 times when compared to rectangle or island block contacts. In addition, dark current and bandwidth was shown to be highly dependent on n++ doping region whereby there is a trade-off for both parameters. From this work, a route to high responsivity and high speed detector can be achieved.I.

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310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

Cited by 83 publications

References 14 publications

Germanium avalanche receiver for low power interconnects

Germanium avalanche receiver for low power interconnects

Recent progress in avalanche photodiodes for sensing in the IR spectrum

Performance optimization of waveguided germanium pin photodetector for optical communication applications

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