31‐1: <i>Invited Paper:</i> The Multimodal Thin‐Film Transistor (MMT): A Versatile Low‐Power and High‐Gain Device with Inherent Linear Response

Bestelink, Eva; Sagazan, Olivier de; Bateson, Max; Sporea, Radu A.

doi:10.1002/sdtp.13900

Cited by 2 publications

(4 citation statements)

References 16 publications

(16 reference statements)

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“…In particular, some studies have demonstrated high- An amplifier device using MMT, which has a similar structure to the split-gate, has been reported. Bestelink et al proposed MMT using two control gates (CG) [87]. CG1 is responsible for regulating the current magnitude, while CG2 performs transportation or blocks the flow of charge.…”

Section: Discussionmentioning

confidence: 99%

“…( f ) Output curve where the value of CG2 is fixed, and it turns on linearly when the voltage is increased by 2 V in CG1. ( g ) Transfer curve and transconductance obtained by applying a fixed voltage to CG2 and sweeping the gate range with CG1 [ 87 ] (adapted from [ 87 ] with permission from The Society for Information Display).…”

Section: Figurementioning

confidence: 99%

“…Therefore, this paper presents the possibility of analog signal processing utilizing the linear operation of MMT. [87] with permission from The Society for Information Display).…”

Section: High-gain Amplifying Devicementioning

confidence: 99%

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Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics

Lee,

Kim,

Yoo

2024

Micromachines

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With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions.

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Section: Discussionmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics

Lee,

Kim,

Yoo

2024

Micromachines

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“…Contact-controlled transistors using multiple gates to independently control charge injection from charge transport are called multimodal transistors (MMTs). They have recently been demonstrated in microcrystalline silicon [1], [2] but the concept can be translated, with ease, to other material systems.…”

Section: Introductionmentioning

confidence: 99%

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

Bestelink

Sagazan

Sporea

2021

Symp Digest of Tech Papers

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Multimodal transistors (MMTs) build on previous understanding of contact‐controlled transistors. Additionally, they allow precise control of the charge injected, distinct from controlling the state of conduction of the semiconductor channel. This approach leads to interesting functionality, of benefit to displays and other large area electronic circuits. Here, we summarize the construction and functionality of the MMT and outline potential applications.

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31‐1: Invited Paper: The Multimodal Thin‐Film Transistor (MMT): A Versatile Low‐Power and High‐Gain Device with Inherent Linear Response

Cited by 2 publications

References 16 publications

Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics

Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics

22.2: Invited Paper: Opportunities for Multimodal Thin‐Film Transistors in Displays and Beyond

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