300mm size ultra-thin glass interposer technology and high-Q embedded helical inductor (EHI) for mobile application

Lai, Wei–Chih; Chuang, Harry; Tsai, Chung-Hung; Yeh, En-Hsiang; Lin, Chia‐Hua; Peng, T. H.; Yen, L. J.; Liao, Wei; Hung, Jui-Pin; Sheu, C. C.; Yu, C. H.; Wang, C. T.; Yee, Kuo-Chung; Yu, Douglas

doi:10.1109/iedm.2013.6724624

Cited by 13 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, adoption of the dip coating method allowed metallization of through glass via (TGV) holes that could be used to form through substrate interconnects for electronic device packaging. The techniques disclosed may prove useful for formation of embedded helical RF inductors 24 and in manufacture of RF devices. 25 ■ ASSOCIATED CONTENT * S Supporting Information…”

Section: ■ Conclusionmentioning

confidence: 99%

Formation of Micrometer Scale Metal Structures on Glass by Selective Electroless Plating on Photopatterned Titanium and Copper Containing Films

et al. 2017

View full text Add to dashboard Cite

A procedure for formation of catalytic SiO substrate adhesive layer patterns and selective electrochemical metal deposition on the catalyst images was investigated. A photoreactive solution containing a diazonaphthoquinone sulfonate ester and Ti and Cu complexes was developed to deposit Cu catalyst-TiO adhesive layer latent images on glass. Sub-micrometer/micrometer scale positive tone photoactive TiCu complex film patterns were formed using a conventional photolithography technique. The Cu ions in 40-50 nm thick Ti and Cu oxide layers formed by pyrolysis of the TiCu complex films were reduced, residual Cu displaced with Pd then the porous Ti oxide structure filled and plated with Cu by selective electroless then electrolytic plating. Annealing the Cu plating filled TiO layers on glass resulted in formation of a smooth Ti/Cu oxide interface that enabled formation of 20 μm thick Cu deposits on glass substrate with up to 1 kN/m adhesion strength. The adhesion strength was attributed to chemical bonding of Ti and Cu oxides to the glass and Ti oxide to the Cu plating that was formed upon annealing the Cu filled TiO interlayer. Furthermore, a dip coating procedure was adapted that allowed copper film deposition on the entire surface of a 300 μm thick glass substrate with 50 μm in diameter holes enabling formation of electrically conductive through glass substrate interconnects.

show abstract

Section: ■ Conclusionmentioning

confidence: 99%

Formation of Micrometer Scale Metal Structures on Glass by Selective Electroless Plating on Photopatterned Titanium and Copper Containing Films

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Recently, glass interposers based on the through glass via (TGV) technology have been extensively studied as an alternative for the silicon interposers [ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ]. Glass, as a substrate material, has several merits; closely matched CTE to silicon dies, high dimensional stability and availability in thin and large panels.…”

Section: Introductionmentioning

confidence: 99%

“…Especially, the high signal isolation, low substrate loss and low material and manufacturing cost of the glass compared to conventional silicon wafers make the glass interposers attractive platforms for high frequency radio frequency (RF)/microwave passive components and packaging. Different types of RF components based on the glass interposers with TGVs such as filters [ 4 ], 3D inductors [ 8 , 9 ] and antennas [ 13 , 14 ] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures

Hyeon

Baek

2018

Micromachines

View full text Add to dashboard Cite

A millimeter-wave substrate integrated waveguide (SIW) has been demonstrated using micromachined tungsten-coated through glass silicon via (TGSV) structures. Two-step deep reactive ion etching (DRIE) of silicon vias and selective tungsten coating onto them using a shadow mask are combined with glass reflow techniques to realize a glass substrate with metal-coated TGSVs for millimeter-wave applications. The proposed metal-coated TGSV structures effectively replace the metallic vias in conventional through glass via (TGV) substrates, in which an additional individual glass machining process to form micro holes in the glass substrate as well as a time-consuming metal-filling process are required. This metal-coated TGSV substrate is applied to fabricate a SIW operating at Ka-band as a test vehicle. The fabricated SIW shows an average insertion loss of 0.69 ± 0.18 dB and a return loss better than 10 dB in a frequency range from 20 GHz to 45 GHz.

show abstract

“…Glass interposer, on the other hand, not limited by the available space like silicon wafer, is able to be produced in panel size which reduces the overall cost. 2 Laser ablation and electrical discharge 3,4 are the common methods to drill through glass via (TGV). Adjustable laser output power makes laser more favorable to fabricate small TGVs with high precision.…”

mentioning

confidence: 99%

Interconnects and Interposer in Porous Anodic Aluminum Oxide: The Fabrication Technology and Process Integration

Chan¹,

Bachman²,

Li³

2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Porous anodic aluminum oxide (AAO) features its interesting nanoporous structure which is capable of being used as a template for nanopatterning, highly anisotropic nanowire fabrication, and MEMs devices fabrication. In this work, AAO was demonstrated to be an interposer substrate for 2.5/3D packaging technology in microelectronics exploiting the unique etching characteristic of nanopores. Not only the high density vertical through via was fabricated but also metallized with Cu as void-less interconnect simply by using wet chemicals. Passive devices like inductors were embedded in AAO film after via metallization and re-distribution layer Cu electroplating which provide multifunctionalities to proposed AAO interposer. AAO with the special structural and etching properties plus its low electrical loss, thermal stability, and mechanical robustness, is a promising material for heterogeneous integration and advanced microelectronic packaging technology.

show abstract

300mm size ultra-thin glass interposer technology and high-Q embedded helical inductor (EHI) for mobile application

Cited by 13 publications

References 4 publications

Formation of Micrometer Scale Metal Structures on Glass by Selective Electroless Plating on Photopatterned Titanium and Copper Containing Films

Formation of Micrometer Scale Metal Structures on Glass by Selective Electroless Plating on Photopatterned Titanium and Copper Containing Films

Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures

Interconnects and Interposer in Porous Anodic Aluminum Oxide: The Fabrication Technology and Process Integration

Contact Info

Product

Resources

About