3000W CW diode laser cladding system

Applications of High Power Semiconductor Lasers

“…10.38 [31]. The emission from a single semiconductor laser bar is confined to the narrow junction region (typically 1 μm), diffraction of the light results in a large beam divergence of up to 45 half angle in the direction perpendicular to the emission line ("fast" axis) and up to 10 half angle in the direction parallel to the emission line ("slow" axis) [50]. The fast axis is collimated by micro-optics.…”

“…The combined beam is focused on the working plane by a focusing system. This approach is widely used in high power laser head design [50].…”