300 kHz metal vapor brightness amplifier

Musorov, Ilya S.; Torgaev, S. N.; Kulagin, Anton E.; Евтушенко, Г. С.

doi:10.1007/s11082-022-04178-6

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…It should be noted when we used high-frequency excitation power supply with tacitron (TSU1) as a switch to excite this GDT at a frequency of 100 kHz, the voltage and current slew rate were equal to 208 V/ns and 2.01 A/ns respectively. In the paper [12], the authors used modulating lamp (GMI) as a switch and voltage and current slew rate were equal to 131.44 V/ns and 1.42 A/ns respectively at a frequency of 100 kHz. Besides, in the paper [15] authors used semiconductor power generator with the same concept.…”

Section: Excitation Of the Active Mediamentioning

confidence: 99%

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CoolMOS based high-voltage power supply with PRF up to 200 kHz for metal vapor active media excitation

Trigub,

Gembukh,

Semenov

2023

Opt Quant Electron

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The paper presents the development and investigation of the semiconductor power supply for metal atoms active media excitation with pulse repetition rate up to 200 kHz. The high voltage pulse formation is based on the LTD-generator concept (linear transform driver) with single turn step-up transformer. This PRF equalled 200 kHz when the consumption power was 750 W. The record pulse repetition frequency (PRF) of CuBr active medium excited by semiconductor excitation source was achieved. The mean radiation power was equal to 650 mW under excitation condition: PRF was to 150 kHz and pulse energy input was 160 µJ/cm 3 .

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Section: Excitation Of the Active Mediamentioning

confidence: 99%

“…Despite of the fact that there are researches which declare record radiation PRF, for example [12], excitation pulses in mentioned works were formed by using modulating lamps (GMI type) or tacitrons (TGU1 type). These devices are not produced at this moment, as we know.…”

Section: Introductionmentioning

confidence: 99%