30 &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mu \text{m}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;-Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays

Geng, Di; Chen, Yuan Feng; Mativenga, Mallory; Jang, Jin

doi:10.1109/led.2015.2445319

Cited by 55 publications

(19 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The third stage uses CLK 3 as driving and CLK1 as reset, and so on. Advantage of using 4-phase clocks instead of 2-phase is that all TFTs in the gate driver are working as switches and no ratioed structure like inverter is applied [2][3][4][5]. As the BLA LTPS TFTs usually have steep threshold swing in transfer characteristics, the conventional ratioed inverter always suffers from poor noise margin.…”

Section: Gate Driver Designmentioning

confidence: 99%

9‐3: BLA LTPS TFTs based μ‐LED Display with Integrated Digital Driving

Chen

Kim

Lee

et al. 2019

Symp Digest of Tech Papers

View full text Add to dashboard Cite

We propose a blue laser annealed (BLA) LTPS TFT based ft-LED display with integrated gate driver and digital data driver. The BLA LTPS TFTs are fabricated using a blue diode laser based lateral crystallization method, which reduces the cost compare to ELA process while offering higher mobility for high current driving. The integrated gate driver and digital data driver enable simplified driving scheme, which further reduces the cost for external driver ICs. Together with the fi-LEDs which offer high brightness over 40,000 cd/m 2 , the fabricated 32 x 32 fi-LED display demonstrates potential approach for smart headlamp and intelligent lighting applications.

show abstract

Section: Gate Driver Designmentioning

confidence: 99%

9‐3: BLA LTPS TFTs based μ‐LED Display with Integrated Digital Driving

Chen

Kim

Lee

et al. 2019

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

“…The third stage uses CLK 3 as driving and CLK1 as reset, and so on. Advantage of using 4-phase clocks instead of 2-phase is that all TFTs in the gate driver are working as switches and no ratioed structure like inverter is applied [16]. As the a-IGZO TFTs usually have steep threshold swing in transfer characteristics and turn on voltage close to 0V, the ratioed inverter always suffers from transition point close to 0V and poor noise margin.…”

Section: Gate Driver Designmentioning

confidence: 99%

P‐24: Integrated Gate Driver for 2700‐ppi 8K 120Hz Displays using a‐IGZO TFTs

Chen

Geng

Jang

2018

Symp Digest of Tech Papers

View full text Add to dashboard Cite

We propose a high-speed, fine-pitch gate driver using a-IGZO TFTs. The gate driver has a pitch of 18.6μm supporting the pixel density up to 2700 pixel-per-inch (ppi) when applied to two sides of the display. Moreover, the gate driver works within a very short stage period of 1μs, which corresponds to a refresh rate of 120Hz at 8K resolution. This study enables gate driver integration for high ppi a-IGZO displays, which can be used for mobile and AR/VR applications.

show abstract

“…Because the a-IGZO TFT has higher mobility than a-Si:H TFT, the number of TFTs per unit area can be increased, or the size of the TFT can be reduced. 6,7 Consequently, creating a high-resolution display is possible. Technology that can achieve a large display or transparent display is critical because a-IGZO TFT has superior uniformity compared with LTPS TFT.…”

Section: Introductionmentioning

confidence: 99%

A novel gate driver circuit for depletion‐mode a‐IGZO TFTs

Jung

Lee

et al. 2019

J Soc Info Display

View full text Add to dashboard Cite

In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a‐InGaZnO thin‐film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by adopting the negative gate‐to‐source voltage (VGS) value for pull‐down units. The results showed all the VOUT voltage waveforms were maintained at VGH voltage despite depletion‐mode operation. The proposed circuit could also obtain stable VOUT voltage when the threshold voltage for all TFTs was changed from −6.5 to +11.5 V. Therefore, the circuit can achieve high reliability regardless of threshold voltage value for a‐IGZO TFTs. In addition, the output characteristics and total power consumption were shown for the alternating current (AC)–driven and direct current (DC)–driven methods based on 120‐Hz full‐HD graphics (1920 × 1080) display panel. The results showed that the AC‐driven method could achieve improved VOUT characteristics compared with DC‐driven method since the leakage current path for Q node can be completely eliminated. Although power consumption of the AC‐driven method can be slightly increased compared with the DC‐driven method for enhancement mode, consumption can be lower when the operation has depletion‐mode characteristics by preventing a leakage current path for pull‐down units. Consequently, the proposed gate driver circuit can overcome the problems caused by the characteristics of a‐IGZO TFTs.

show abstract

30 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays

Cited by 55 publications

References 17 publications

9‐3: BLA LTPS TFTs based μ‐LED Display with Integrated Digital Driving

9‐3: BLA LTPS TFTs based μ‐LED Display with Integrated Digital Driving

P‐24: Integrated Gate Driver for 2700‐ppi 8K 120Hz Displays using a‐IGZO TFTs

A novel gate driver circuit for depletion‐mode a‐IGZO TFTs

Contact Info

Product

Resources

About