30 Gb/s NRZ Transmission with Lumped-Element Silicon Photonic Mach-Zehnder Modulator

Cammarata, Simone; Velha, Philippe; Palla, F.; Pasquale, F. Di; Saponara, Sergio; Faralli, S.

doi:10.1109/ipc53466.2022.9975756

Cited by 2 publications

(4 citation statements)

References 3 publications

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“…Electro-optical RF small-signal and large-signal characterizations have been conducted with the same procedure described in [27]. Small-signal EO -3 dB transmission bandwidths for both devices were measured in the range 6.5 GHz to 9 GHz varying the PN junctions' reverse bias from 0 V to 4 V. As shown in figure 4, the symmetry in this result between both devices confirms that the P+ doping addition does not alter the main PN junction capacitance.…”

Section: Jinst 19 C03009mentioning

confidence: 99%

“…To give a fair comparison, an analogous rectilinear MZM with the same doped length would have a footprint of about 500 µm × 2 mm while typical RMs occupy around 400 µm × 150 µm footprint, including bond-pads for the active PN-junction and the unavoidable thermal heater for resonance control. The overall structure of the device design can be checked in [27], while here we will focus in the characterization of two different versions of the same -2 - folded MZM (FMZM). As indicated in figure 2, FMZMs with conventional and radiation-hardened phase shifters have been included in the same photonic integrated circuit (PIC).…”

Section: Device Designmentioning

confidence: 99%

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Compact silicon photonic Mach-Zehnder modulators for high-energy physics

Cammarata,

Palla,

Saponara

et al. 2024

J. Inst.

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The characterization of compact non-traveling-wave Mach-Zehnder modulators for optical readout in high-energy physics experiments is reported to provide power-efficient alternatives to conventional traveling-wave devices and a more resilient operation compared to ring modulators. Electro-optical small-signal and large-signal measurements showcase the performances of custom NTW-MZMs designed and fabricated in iSiPP50G IMEC's technology in the framework of INFN's FALAPHEL project. Bit-error-rate results demonstrate their potential suitability for optical links up to 25 Gb/s when equipped with either conventional deep-etched or radiation-hardened shallow-etched free-carrier-based phase shifters.

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Section: Jinst 19 C03009mentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

Cammarata,

Palla,

Saponara

et al. 2024

J. Inst.

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“…Recently, there has been a renewed focus on lumped MZMs due to their potential for low power consumption and compact size [10][11][12][13][14][15][16][17][18][19][20][21][22]. Compared to the TWE, lumped electrodes act as capacitive elements that only consume energy during signal conversion, thus reducing the power consumption of the device [1,10].…”

Section: Introductionmentioning

confidence: 99%

“…This trade−off limits the performance improvement of the device. Additionally, the silicon−based lumped MZMs suffer from increased parasitic capacitance due to doped PN junctions, further reducing their EO bandwidth [11][12][13][14][15][16][17][18][19][20]. Various efforts have been taken to increase the EO bandwidth, including the adoption of low output impedance [12] or switched capacitor drive circuits [13], equalizers [14,15], and predistortion techniques [16].…”

Section: Introductionmentioning

confidence: 99%

High-Bandwidth Lumped Mach-Zehnder Modulators Based on Thin-Film Lithium Niobate

Yang,

Sun,

Zhang

et al. 2024

Photonics

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Recently, lumped Mach-Zehnder Modulators (MZMs) have received renewed attention due to their potential for low power consumption and compact size. However, the practicality of lumped MZMs with conventional lumped electrodes (C−LEs) is limited by their lower electro−optical (EO) bandwidth. The reduction in EO bandwidth results from the inherent trade−off between EO bandwidth and half−wave voltage length product (VπL) within the C−LE architecture. This paper proposes a thin−film lithium niobate (TFLN)−based lumped MZM with capacitively−loaded lumped electrodes (CL−LEs). The purely linear EO effect of the LN eliminates the parasitic capacitance in the doped PN junction and enhances the EO bandwidth. Furthermore, the CL−LE structure can break the limitation between EO bandwidth and VπL inherent in the C−LE design. Simulations show the proposed device achieves a high EO bandwidth of 32.4 GHz and a low VπL of 1.15 V·cm. Due to the reduced capacitance and lower VπL, the power consumption of the device is as low as 0.1 pJ/bit. Simulation results indicate that the open−eye diagrams are achieved at 64 Gb/s for 1.5 mm TFLN lumped MZM, with an ER of 2.97 dB. Consequently, the proposed device architecture substantially enhances the performance of lumped MZMs, showing promise for application in short−reach optical interconnects within data centers.

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30 Gb/s NRZ Transmission with Lumped-Element Silicon Photonic Mach-Zehnder Modulator

Cited by 2 publications

References 3 publications

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

High-Bandwidth Lumped Mach-Zehnder Modulators Based on Thin-Film Lithium Niobate

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