3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules

Ke, Haotao; Mehrotra, Utkarsh; Hopkins, Douglas C.

doi:10.1109/tpel.2021.3081679

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B Wirebondless Modules1

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2024

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Cited by 5 publications

(1 citation statement)

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“…In 3-D modules, semiconductor chips are attached to two or more substrates, and the interconnection between them can be achieved through any technology. Hopkins et al [111] have proposed a prismatic module using flexible substrates and a connecting structure in the middle of the package. Zhang et al [112] used low temperature co-fired ceramic (LTCC) as a chip carrier sandwiched between two DBCs in a wirebondless SiC package.…”

Section: B Wirebondless Modulesmentioning

confidence: 99%

Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Mazumder

Voss

Dowling

et al. 2023

IEEE J. Emerg. Sel. Topics Power Electron.

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This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

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Section: B Wirebondless Modulesmentioning

confidence: 99%