3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit

Kawamura, S; Sasaki, N.; Kawai, S.; Shirato, Takafumi; Aneha, N.; Nakano, M.

doi:10.1109/iedm.1987.191542

1987 International Electron Devices Meeting 1987

DOI: 10.1109/iedm.1987.191542

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3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit

S Kawamura

N. Sasaki²,

S. Kawai³

et al.

Abstract: A three-dimensional (3-D)high-voltage flat-panel display scan driver composed of high-voltage offsetgate SO1 output circuits merged with low-voltage bulk CMOS control-units has successfully been fabricated by using a CW-Ar laser recrystallization technology.The SO1 high-voltage circuits are operated at a power-supply voltage of 60 -180V with an output current of more than 100mA for a channel length of

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Cited by 3 publications

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Planar integration of laser‐recrystallized SOI‐Tr's fabricated by lateral seeding process and bulk‐Tr's and its application to fabrication of a solid‐state image sensor

Fujii

Senda

Emoto

et al. 1989

Electron Comm Jpn Pt II

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To realize functions which cannot be achieved by conventional integrated circuits composed of bulk transistors (bulk‐Tr), part of an integrated circuit was formed by laser‐recrystallized SOI transistors (SOI‐Tr) using the lateral seeding process. The uniqueness of this structure is that the bulk‐Tr's and SOI‐Tr's are formed in the same plane. To realize this planar structure, the necessary basic technology was developed and bulk‐Tr's and SOI‐Tr's were formed in the same plane to test the structure. The characteristics of the transistors were compatible to those of transistors formed by conventional MOS processes. For the application of this structure to integrated circuits, a solid‐state image sensor was fabricated where the driver circuits were formed by the bulk‐Tr's and the read‐out of the picture elements was carried out by using the SOI‐Tr's. As a result, a high‐quality image was obtained and the smear noise caused by photoleakage current was suppressed.

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Planar integration of laser‐recrystallized SOI‐Tr's fabricated by lateral seeding process and bulk‐Tr's and its application to fabrication of a solid‐state image sensor

Fujii

Senda

Emoto

et al. 1989

Electron Comm Jpn Pt II

View full text Add to dashboard Cite

show abstract

Low-power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET

Takao

Shimada

Suzuki

et al. 1992

IEEE Trans. Electron Devices

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An intelligent power IC with double buried-oxide layers formed by SIMOX technology

Ohno

Matsumoto

Izumi

1993

IEEE Trans. Electron Devices

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3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit

Cited by 3 publications

References 4 publications

Planar integration of laser‐recrystallized SOI‐Tr's fabricated by lateral seeding process and bulk‐Tr's and its application to fabrication of a solid‐state image sensor

Planar integration of laser‐recrystallized SOI‐Tr's fabricated by lateral seeding process and bulk‐Tr's and its application to fabrication of a solid‐state image sensor

Low-power and high-stability SRAM technology using a laser-recrystallized p-channel SOI MOSFET

An intelligent power IC with double buried-oxide layers formed by SIMOX technology

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