3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications

Maroldt, S.; Ercoli, Mariano

doi:10.23919/eumic.2017.8230693

Cited by 38 publications

(18 citation statements)

References 6 publications

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“…Once the values p 1 and p 2 have been found, one can define the parameters ϕ, r R and r X from the expressions (28), (37) and (36) respectively. These parameters define the optimal load impedance according to the expressions (38) and (39).…”

Section: B Back-off Operationmentioning

confidence: 99%

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Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

et al. 2020

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In this paper, a novel outphasing power amplifier (PA) based on class-E amplifiers with shunt capacitances and shunt filters is proposed. The new design provides high drain efficiency for both peak and back-off power levels. A mathematical model for the class-E power amplifier with shunt capacitance and shunt filter is presented. The proposed model enables derivation of load circuit parameters that provide optimum drain efficiency for the peak and back-off power levels using closed form mathematical expressions. Based on this model, an outphasing power amplifier is designed and subsequently implemented using microstrip transmission lines and a GaN HEMT devices. The fabricated power amplifier prototype is optimized for 2.14 GHz and provides drain efficiency of over 60% for back-off power levels up to 8.5 dB. The amplifier demonstrates a 44.3% drain efficiency for 64QAM OFDM modulated signal with 20 MHz bandwidth. Adjacent channel leakage ratio (ACLR) of-39.5 dB and error vector magnitude (EVM) of 0.9 % were achieved after the application of a memory polynomial linearization algorithm.

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Section: B Back-off Operationmentioning

confidence: 99%

“…Consequently, for class-E it is easy to provide wideband operation. Due to these advantages, the class-E PA has drawn the attention of researchers for 5G communication systems [37], [38]. The concept of the class-E amplifier was described in [39].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

et al. 2020

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“…Systems such as 5G will make use of spectrum efficient signals with high peak-to-average ratio that will require advanced PA architectures to increase the average power efficiency to an acceptable level. In this framework, the Doherty PA (DPA) has been widely used to enhance PA efficiency when amplifying amplitude modulated signals, and some examples of DPAs for 5G applications have already been presented [3], [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Simplified analysis of the effect of load variation in common Doherty power amplifier architectures

Quaglia

Lees

2019

2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)

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This paper describes the effect of load variation on Doherty power amplifier performance. A simplified analysis that considers three common Doherty amplifier architectures allows the evaluation of how load variation translates into variation of load at the devices' current generator plane. Under the assumption that system countermeasures are used to avoid drain voltage clipping, the average efficiency and power are evaluated and compared among the different architectures. While, at the centre design frequency, similar results can be observed, it can be seen that an intrinsically broadband design leads to better average power and efficiency over frequency vs. load variation. Index Terms-Mobile communication, power amplifiers, antenna arrays.

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“…A 3.6‐3.8 GHz band is one of the 5G frequency candidates. Doherty power amplifiers above 3 GHz have been developed to have wideband with hybrid type and to be compact size by using GaN core power amplifier MMIC …”

Section: Introductionmentioning

confidence: 99%

“…Doherty power amplifiers above 3 GHz have been developed to have wideband with hybrid type 2 and to be compact size by using GaN core power amplifier MMIC. 3 In this letter, we propose a compact Doherty power amplifier with GaN MMICs and GaAs IPDs. No phase compensation circuit at the input stage is applied by optimizing phases of carrier amplifier and peaking amplifier.…”

Section: Introductionmentioning

confidence: 99%

A compact Doherty power amplifier for massive multi‐input multi‐output applications

Noh

Sin

2018

Micro & Optical Tech Letters

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A Doherty power amplifier composed of GaAs IPDs (Lange coupler and Doherty combiner) and GaN MMICs (carrier amplifier and peaking amplifier) is presented for 5G massive multi‐input multi‐output (MIMO). No input phase compensation circuit and no output offset lines were used for a compact design and the assembled Doherty power amplifier is as small as 6.6 mm × 3.6 mm with a saturation output power of 46 dBm. The asymmetric Doherty power amplifier exhibits a gain greater than 27.8 dB, PAE greater than 39.8% at average output power of 38 dBm, and ACLR less than −27.7 dBc using a 20 MHz LTE signal with 7.5 dB PAR across 3.6‐3.8 GHz.

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3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications

Cited by 38 publications

References 6 publications

Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

Simplified analysis of the effect of load variation in common Doherty power amplifier architectures

A compact Doherty power amplifier for massive multi‐input multi‐output applications

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