3.3: <i>Invited Paper</i>: Future Possibility of C‐Axis Aligned Crystalline Oxide Semiconductors Comparison with Low‐Temperature Polysilicon

Yamazaki, Shunpei

doi:10.1002/j.2168-0159.2014.tb00003.x

Cited by 25 publications

(7 citation statements)

References 8 publications

(6 reference statements)

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“…While both LTPS and AOS TFTs offer significantly higher mobilities compared to a-Si:H, AOS TFT has the lowest offcurrent even when compared to a-Si:H as shown in Figure 1 [1][2][3][4]. A major reason for the lower leakage current of the unipolar IGZO semiconductor TFT is due to its wider band gap (E G (IZGO) = 3.25 eV), compared to the narrower band gaps of a-Si:H and LTPS semiconductors (E G (a-Si:H) = 1.7 eV and EG (LTPS) = 1.1 eV) that are bipolar.…”

Section: Tft Backplane Technologymentioning

confidence: 95%

“…Indium Gallium Zink Oxide (IZGO) is the typical semiconductor material used in AOS-TFTs. Similar to a-Si:H, the typical structure of AOS is also amorphous, although there are some efforts by Sharp and SEL to develop AOS-TFT backplane technology using c-axis aligned (crystalline) AOS materials [3,4] for additional improvements in performance. Table 1 shows the comparison between the LTPS and AOS TFT technologies using a-Si:H TFT as a reference, for application to AM OLEDs.…”

Section: Tft Backplane Technologymentioning

confidence: 99%

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Recent progress in OLED and flexible displays and their potential for application to aerospace and military display systems

Sarma

2015

Display Technologies and Applications for Defense, Security, and Avionics IX; And Head- And Helmet-Mounted Displays XX

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Organic light emitting diode (OLED) display technology has advanced significantly in recent years and it is increasingly being adapted in consumer electronics products with premium performance, such as high resolution smart phones, Tablet PCs and TVs. Even flexible OLED displays are beginning to be commercialized in consumer electronic devices such as smart phones and smart watches. In addition to the advances in OLED emitters, successful development and adoption of OLED displays for premium performance applications relies on the advances in several enabling technologies including TFT backplanes, pixel drive electronics, pixel patterning technologies, encapsulation technologies and system level engineering. In this paper we will discuss the impact of the recent advances in LTPS and AOS TFTs, R, G, B and White OLED with color filter pixel architectures, and encapsulation, on the success of the OLEDs in consumer electronic devices. We will then discuss potential of these advances in addressing the requirements of OLED and flexible displays for the military and avionics applications.

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Section: Tft Backplane Technologymentioning

confidence: 95%

Section: Tft Backplane Technologymentioning

confidence: 99%

Recent progress in OLED and flexible displays and their potential for application to aerospace and military display systems

Sarma

2015

Display Technologies and Applications for Defense, Security, and Avionics IX; And Head- And Helmet-Mounted Displays XX

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“…We discovered CAAC-IGZO and nanocrystalline IGZO (nc-IGZO), which have crystal morphologies different from those of single crystal and amorphous IGZOs [9][10][11][12]. Cornell University has also investigated CAAC-OS [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

7-2: Transmissive OLED and Reflective LC Hybrid (TR-Hybrid) Display

Kusunoki

Kawashima

Jimbo

et al. 2016

SID Symposium Digest of Technical Papers

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In our newly developed display with low power consumption, circuits for a reflective liquid crystal display (LCD) and an organic light-emitting diode (OLED) display are formed in the same field-effect transistor layer to control these two types of display devices. This display has high visibility in both a bright and a dark environment with use of the reflective LCD and the OLED display, respectively.

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“…Oxide semiconductors have a wide range of crystallinities beyond the single-crystal state, and these alternatives have been studied in previous research [1][2][3][4][5][6][7][8][9]. In particular, we used a c-axis aligned crystalline oxide semiconductor (CAAC-OS) to fabricate highly reliable field-effect transistors (FETs) [10][11][12][13][14]. Employing bottom-gate top-contact (BGTC) CAAC-OS FETs, we fabricated 513-ppi transmissive liquid-crystal display (LCD) panels and 434-ppi reflective LCD panels [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%