2D PtSe₂ Enabled Wireless Wearable Gas Monitoring Circuits with Distinctive Strain-Enhanced Performance

Abstract

The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast to its negative role in existing transistors or sensors, herein, we discover a positive effect of strain to the ammonia detection in 2D PtSe 2 . Linear modulation of sensitivity is achieved in flexible 2D PtSe 2 sensors via a customized probe station with an in situ strain loading apparatus. For trace ammonia absorption, a 300% enhancement in room-temperature sensitivity (31.67% ppm −1 ) and an ultralow limit of detection (50 ppb) are observed under 1/4 mm −1 curvature strain. We identify three types of strainsensitive adsorption sites in layered PtSe 2 and pinpoint that basal-plane lattice distortion contributes to better sensing performance resulting from reduced absorption energy and larger charge transfer density. Furthermore, we demonstrate state-of-the-art 2D PtSe 2 -based wireless wearable integrated circuits, which allow real-time gas sensing data acquisition, processing, and transmission through a Bluetooth module to user terminals. The circuits exhibit a wide detection range with a maximum sensitivity value of 0.026 V•ppm −1 and a low energy consumption below 2 mW.

Recent Progress in Multifunctional Gas Sensors Based on 2D Materials

“…Notably, it showcased average responses of 11.2% and 27.3% in five cycles at 1 and 5 ppm, respectively, underscoring its exceptional performance in detecting and monitoring trace gas concentrations. Additionally, the data fluctuations remained within a minimal range of 10%, further emphasizing the system's reliability [67].…”

“…gas concentrations. Additionally, the data fluctuations remained within a minimal range of 10%, further emphasizing the system's reliability [67].…”

“…Notably, it showcased average responses of 11.2% and 27.3% in five cycles at 1 and 5 ppm, Strain engineering has garnered considerable attention due to its vast potential in manipulating the electrical, optoelectronic, magnetic, and electrochemical properties of TMDs, black phosphorus, and other 2D materials [57,68]. A strain-enhanced PtSe 2 wireless wearable gas sensor was fabricated for the ultrasensitive detection of trace NH 3 [67].…”

High-Speed Broadband PtSe2/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe2

“…In this work, the PtSe 2 films are obtained by TAC in which the selenization of the Pt film is carried out at a specific height from the bottom of the reaction chamber Figure a shows the Raman spectra of the incompletely selenized PtSe 2 films synthesized at different selenization heights.…”

Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe2P4–Metal Contacts

“…Two-dimensional (2D) semiconductors, such as graphene, transition metal dichalcogenides (TMDs), and black phosphorene (BP), have exhibited potential applications in field effect transistors (FETs). − However, their practical applications still have some limitations, such as the zero-band gap in graphene, , poor environmental stability in BP, , and low carrier mobility in TMDs. , MoSi 2 N 4 and WSi 2 N 4 monolayers, recently synthesized by the chemical vapor deposition (CVD), have shown the potential to realize high-speed and low-power consumption devices due to the suitable band gap, high carrier mobility, and outstanding environmental stability. − Another MoSi 2 N 4 family material, the MoGe 2 P 4 monolayer, has attracted much attention due to its suitable band gap (0.5 eV) and outstanding carrier mobility (exceeding 10 3 cm 2 V –1 s –1 ), which is higher than those of the recently reported MoSi 2 N 4 /WSi 2 N 4 . Besides, the MoGe 2 P 4 monolayer is both dynamically and mechanically stable, which is much better than that of black phosphorene .…”