2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition (Adv. Electron. Mater. 3/2020)

Wang, Weihao; Zhang, Tao; Seliverstov, Aleksandr; Zhang, Huihui; Wang, Yichen; Wang, Fengzhi; Peng, Xiaoli; Lu, Qiaoqi; Qin, Chaochao; Pan, Xinhua; Zeng, Yu‐Jia; Haesendonck, Chris Van; Ye, Zhizhen

doi:10.1002/aelm.202070012

Cited by 3 publications

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“…In particular, the thickness of SnO and SnS films can be controlled precisely by the number of laser shots, which is supported by our previous work and other research results. [ 16,54 ] To further observe the quality of the SnO/SnS heterojunction interface, as shown in Figure 1c, the lattice stripes of SnO and SnS can be presented clearly. The lattice spacing of 0.31 nm is compatible with the SnO (101) plane, whereas the lattice spacing of 0.29 nm is assigned to the SnS (111) plane, according to the calculations.…”

Section: Resultsmentioning

confidence: 99%

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Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Zhang

Liu

Wang

et al. 2023

Adv Elect Materials

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A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipolar to n‐type by growing SnS with a different thickness on SnO with ambipolarity. The p‐type mobility could reach 1.77 cm2 V−1 s−1 and the switching ratio could reach 1517. The ambipolar transistor shows a V‐type transfer curve with electron channel mobility and hole mobility, respectively. The cross‐sectional transmission electron microscopy of the heterojunction interface reveals a high level of quality, which explains the method by which the working mode of the heterojunction changes. In addition, complementary metal‐oxide‐semiconductor (CMOS) inverters are successfully used with p‐type SnO transistors, n‐type SnO/SnS transistors, and ambipolar transistors. This work proposes a novel approach to preparing CMOS electrical components, as well as a new working mode for transistors, that are both simple and efficient.

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Section: Resultsmentioning

confidence: 99%

“…Our previous work confirmed its promising application for high‐performance p‐type transistors. [ 54 ] Additionally, the n‐type conductivity of SnS films can be realized by doping with Pb, [ 55,56 ] while ambipolar behavior can also be seen in monolayer‐SnS field‐effect transistors. [ 57 ]…”

Section: Introductionmentioning

confidence: 99%

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Zhang

Liu

Wang

et al. 2023

Adv Elect Materials

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“…When C S approaches 0 or C ins approaches infinity, the minimum SS for a conventional FET at room temperature (T = 300 K) is 60 mV/decade. Traditional approaches often rely on minimum subthreshold swings (SS min ) calculated at fixed-point voltages, [20][21][22][23] which do not accurately represent gating efficiency. Therefore, optimizing SS min alone does not necessarily improve OPT performance.…”

Section: Introductionmentioning

confidence: 99%

Overcoming the Unfavorable Effects of “Boltzmann Tyranny:” Ultra‐Low Subthreshold Swing in Organic Phototransistors via One‐Transistor‐One‐Memristor Architecture

Yang,

Yuan,

Wang

et al. 2024

Advanced Materials

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Organic phototransistors (OPTs), as photosensitive organic field‐effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance has been fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave) to a minimum of 60 mV/decade at room temperature. In this study, we propose an innovative one‐transistor‐one‐memristor (1T1R) architecture to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra‐low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109 cm W−1Hz1/2, outperforming conventional OPTs (4.9 × 104 cm W−1Hz1/2) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of “Boltzmann tyranny,” setting the stage for the development of ultra‐low SSave devices in various optoelectronic applications.This article is protected by copyright. All rights reserved

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Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

Tareen

Khan

Aslam³

et al. 2021

Nanoscale

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2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition (Adv. Electron. Mater. 3/2020)

Cited by 3 publications

References 0 publications

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Overcoming the Unfavorable Effects of “Boltzmann Tyranny:” Ultra‐Low Subthreshold Swing in Organic Phototransistors via One‐Transistor‐One‐Memristor Architecture

Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

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