Abstract:Optoelectronic devices based on geometrically asymmetric architecture have recently attracted attention due to their high performance as photodetectors and simple fabrication process. Herein, a p‐type 2D MoSe2 photodetector based on geometrically asymmetric contacts is reported for the first time. The device exhibits a high current rectification ratio of ≈104 and a large self‐powered photovoltage responsivity of ≈4.38 × 107 V W−1, as well as a maximum photocurrent responsivity of ≈430 mA W−1 along with a respo… Show more
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