2D modelling of polycrystalline silicon thin film solar cells

Teodoreanu, A.-M.; Friedrich, F.; Leihkauf, R.; Boit, Christian; Leendertz, Caspar; Korte, Lars

doi:10.1051/epjpv/2013017

Cited by 2 publications

(3 citation statements)

References 16 publications

(16 reference statements)

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“…At these intensities the excess carrier concentration has reached 4 × 10 15 cm −3 . The sample is here in an intermediate region between low and high injection .…”

Section: Resultsmentioning

confidence: 99%

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Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

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Teodoreanu

Leihkauf

et al. 2016

Physica Status Solidi (a)

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The charge carrier lifetime and accordingly the diffusion length in polycrystalline semiconductor materials is known to be detrimentally influenced by disordered interfaces like grain boundaries (GBs). The GB light beam induced current (GB‐LBIC) technique is suitable for the extraction of the minority charge carrier diffusion length in unprocessed polycrystalline materials. This measurement method is based on the GB itself acting as a charge collector. A spatially‐resolved light beam induced current can thus be measured even without a collecting p–n junction or Schottky contact, and without biasing the sample. In this contribution we present a simulation based analysis of measured GB‐LBIC line scans on bonded silicon wafers and polycrystalline silicon thin films with different laser wavelengths and intensities.

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“…At these intensities the excess carrier concentration has reached 4 × 10 15 cm −3 . The sample is here in an intermediate region between low and high injection .…”

Section: Resultsmentioning

confidence: 99%

“…The defects in the GB are considered to be of dangling‐bond‐type. A typical defect distribution, which is present also in amorphous silicon, was chosen for modeling the defects (Table ) . The result is a positive charge at the GB and an intrinsic electric field with opposite directions to the left and right of the GB .…”

Section: Methodsmentioning

confidence: 99%

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

Gref

Teodoreanu

Leihkauf

et al. 2016

Physica Status Solidi (a)

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“…However, Poly-Si based Solar cells have shown very low efficiency as a result of the existence of grain boundaries (GBs), which serve as sites of recombination for minority excess carriers [3,4] affecting negatively the open-circuit voltage of the cell.…”

Section: Introductionmentioning

confidence: 99%

New Simplified Model of Back Surface Field Polycrystalline Silicon Solar Cells

Ouafia,

Yamina,

Attouya

et al. 2024

MMEP

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Here, an analytical model is proposed to solve in two dimensions the transport equations of the minority carriers, using the method of separation of variables. The present approach considers that the solar cell is composed, in addition to emitter and base regions, of a non-uniformly doped thin region at the back cell to improve the device output parameters. The model is used to investigate the influence of built-in electric field, grain size and recombination velocities (Sgb and Sb for the grain boundary and back surface respectively) on the distribution of excess carriers and the consequent photovoltaic characteristics. The results showed that, as compared to a typical n+p structure, the addition of a p+ rear surface field region enhances the solar cell's output characteristics under the AM1.5 spectrum. An optimum increase in conversion efficiency, open circuit voltage and photocurrent density were found to be 7.2% (from 14% to 15.02%), 6.4% and 5%, respectively. This demonstrates the potential of BSF cell designs to meaningfully improve commercial polycrystalline silicon solar cell's performance. Additional results indicate that higher performance parameters result from increasing grain size and decreasing grain boundary recombination velocity, and that only a modest electric field is sufficient to eliminate the impact of surface recombination velocity for values less or equal to approximately 5.10 3 cm.s -1 . Besides, to validate our approach, the values obtained for photovoltaic quantities were compared with other results reported in literature. A good agreement is found.

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2D modelling of polycrystalline silicon thin film solar cells

Cited by 2 publications

References 16 publications

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

New Simplified Model of Back Surface Field Polycrystalline Silicon Solar Cells

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