2D modelling of a non-confined circular impinging jet reactor; Si chemical vapour deposition

Wang, Y.B.; Chaussavoine, C.; Teyssandier, F.

doi:10.1016/0022-0248(93)90045-x

Cited by 15 publications

(5 citation statements)

References 28 publications

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“…Most of these studies addressed classical reactor configurations (see Fig. 4), such as horizontal rectangular duct reactors [14,[76][77][78][79][80][81][82], vertical impinging jet and rotating disk reactors [22,[83][84][85][86][87][88], pancake reactors [89,90], barrel reactors [91][92][93], planetary reactors [94][95][96], hot-wall multi-wafer LPCVD reactors [74,[97][98][99]. Many studies were devoted to low pressure single wafer reactors of the stagnation flow type [21,28,[100][101][102].…”

Section: Cvd Simulation Models: a Literature Reviewmentioning

confidence: 99%

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Kleijn

Dorsman

Kuijlaars

et al. 2007

Journal of Crystal Growth

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Section: Cvd Simulation Models: a Literature Reviewmentioning

confidence: 99%

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Kleijn

Dorsman

Kuijlaars

et al. 2007

Journal of Crystal Growth

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“…the spatial distribution of velocity, energy and density from the viewpoint of reactor size. These were evaluated by the Navier-Stokes equations [3][4][5][6][7] or the DSMC method [8][9][10][11]. The use of Navier-Stokes equations is most e ective when the ow conditions are well in the hydrodynamic regime.…”

Section: Modelling Of Cvd Processmentioning

confidence: 99%

Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species

Wu¹,

Hsiao

Lian

et al. 2003

Numerical Methods in Fluids

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SUMMARYLow-pressure or ultra-high vacuum chemical vapour deposition often involves important trace species in both gas-phase and surface reactions. The conservative weighting scheme (J. Thermophys. Heat Transfer 1996; 10(4):579) has been used to deal with the trace species often involved in some non-reactive physical processes, which is otherwise considered computationally impossible using the conventional DSMC method. This conservative weighting scheme (CWS) improves greatly the statistical uncertainties by decreasing the weighting factors of trace-species particles and ensures the conservation of both momentum and energy between two colliding particles with large di erence of weighting factors. This CWS is further extended to treat reactive processes for gas-phase and surface reactions with trace species, which is called extended conservative weighting scheme (ECWS). A single-cell equilibrium simulation is performed for verifying both the CWS and ECWS in treating trace species. The results of using CWS show that it is most e cient and accurate for weight ratio (trace to non-trace) equal to or less than 0.01 for ows with two and three species. The results of a single-cell simulation using ECWS for gas-phase reaction and surface reactions show that only ECWS can produce acceptable results with reasonable computational time.

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“…When E c is greater than E a , the probability of reaction P r is calculated. The probability P r is obtained by integrating the known equilibrium distribution f(EJ for all the total collision energy and equating it to a chemical rate constant k(T) at temperature T as Är(r)= [a t gP r f(E c )dE c = AT" exp{-E a /kT), (2) where cr t is the collision cross section, g is the relative velocity, E a is the activation energy of the reaction, A and TJ are constants, and k is the Boltzmann constant. As mentioned above, when the reaction is infrequent, that is, probability P r is low, it causes the large difference of density between the chemical species.…”

Section: Ab + M -» a + B + Mmentioning

confidence: 99%

Full simulation of silicon chemical vapor deposition process

Sakiyama¹,

Takagi²,

Matsumoto³

2001

AIP Conference Proceedings

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Abstract. Chemical vapor deposition (CVD) process composes a complex system, where chemical reaction and heat and mass transfer interact with each other. And these macro-scale phenomena are deeply related to micro-scale mechanics. Hence multi-scale analysis is required to understand these complicated phenomena and to develop full-scale simulator of the CVD reactor. In this paper, we present the macro-scale simulation by the DSMC method. In those reactors, sometime the important species such as the reactive intermediates have extremely low density ratio. This causes the large statistical fluctuation in the DSMC method, where the number of particles and the calculation time are limited. We propose a new numerical method for this kind of problem and the whole process of silicon CVD is simulated by the new method. We simulate the following CVD process: the gas mixture of silane and hydrogen forms a free expansion jet through a nozzle orifice at the top of the reactor and interact with the heated substrate that is set vertical to flow, where silane decomposes into silylene and silane and silylene deposit onto the surface. It is confirmed that the new method is very effective and make it possible to analyze the CVD process more precisely.

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2D modelling of a non-confined circular impinging jet reactor; Si chemical vapour deposition

Cited by 15 publications

References 28 publications

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species

Full simulation of silicon chemical vapor deposition process

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