2017
DOI: 10.1002/adma.201770015
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2D Materials: Large‐Area and High‐Quality 2D Transition Metal Telluride (Adv. Mater. 3/2017)

Abstract: Two‐dimensional tellurides are promising for 2D topological insulators and type‐II Weyl semimetals. In article 1603471, J. Lin, G. Liu, Z. Liu, and co‐workers report the large‐scale growth of large‐size and high‐quality atomically layered MoTe2 and WTe2, using a chemical vapor deposition (CVD) method. STEM imaging identifies the atomic structures of WTe2 and MoTe2. Electric‐transport measurements reveal the semimetal‐to‐insulator transition in WTe2 and superconductivity in MoTe2.

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Cited by 8 publications
(7 citation statements)
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“…However, the low chemical reactivity of Te together with the small electronegativity difference between Te and Mo/W makes the synthesis of Te-based TMDs (MoTe 2 and WTe 2 ) much more difficult than that of S- and Se-based TMDs, such as MoS 2 , WS 2 , MoSe 2 , WSe 2 , etc. Furthermore, the ground-state energy difference per formula unit between 2H and 1T’ phases of monolayer MoTe 2 (35 meV) is much smaller than the comparable energy difference in other TMDs materials, posing great challenges to the controllable synthesis of a pure crystal phase MoTe 2 . Recently, several pioneering works have reported the successful synthesis of two-dimensional (2D) MoTe 2 by using chemical vapor deposition (CVD) growth. , For example, Lee and Kong’s group reported the synthesis of a few-layer MoTe 2 film with different phases via the tellurization of predeposited Mo or MoO 3 films. ,, Subsequently, the Zhou and Liu group illustrated the direct CVD growth of monolayer 1T’-MoTe 2 film using MoO 3 or MoO 3 –MoCl 5 –Te mixed source as a Mo precursor. , These groundbreaking works have given great promotion to the synthesis of MoTe 2 film; however, a method of controlled synthesis of highly crystalline 2H MoTe 2 and 1T’ MoTe 2 with defined geometry and thickness is still lacking. In particular, the structural metastability of MoTe 2 makes its phase structure sensitive to the subtle variation of the growth parameters in the CVD process, which poses a great obstacle to realize phase control in CVD growth of MoTe 2 .…”
Section: Introductionmentioning
confidence: 99%
“…However, the low chemical reactivity of Te together with the small electronegativity difference between Te and Mo/W makes the synthesis of Te-based TMDs (MoTe 2 and WTe 2 ) much more difficult than that of S- and Se-based TMDs, such as MoS 2 , WS 2 , MoSe 2 , WSe 2 , etc. Furthermore, the ground-state energy difference per formula unit between 2H and 1T’ phases of monolayer MoTe 2 (35 meV) is much smaller than the comparable energy difference in other TMDs materials, posing great challenges to the controllable synthesis of a pure crystal phase MoTe 2 . Recently, several pioneering works have reported the successful synthesis of two-dimensional (2D) MoTe 2 by using chemical vapor deposition (CVD) growth. , For example, Lee and Kong’s group reported the synthesis of a few-layer MoTe 2 film with different phases via the tellurization of predeposited Mo or MoO 3 films. ,, Subsequently, the Zhou and Liu group illustrated the direct CVD growth of monolayer 1T’-MoTe 2 film using MoO 3 or MoO 3 –MoCl 5 –Te mixed source as a Mo precursor. , These groundbreaking works have given great promotion to the synthesis of MoTe 2 film; however, a method of controlled synthesis of highly crystalline 2H MoTe 2 and 1T’ MoTe 2 with defined geometry and thickness is still lacking. In particular, the structural metastability of MoTe 2 makes its phase structure sensitive to the subtle variation of the growth parameters in the CVD process, which poses a great obstacle to realize phase control in CVD growth of MoTe 2 .…”
Section: Introductionmentioning
confidence: 99%
“…This process involves the use of gaseous precursor reactants, which are introduced into a reaction chamber where they react and deposit onto a substrate, leading to the formation of a thin film. To achieve this, components of the gaseous precursor are broken down through atomic and intermolecular chemical interactions [93–95] . The substrates, precursors, temperature, and other parameters all affect the shape and characteristics of 2D metal tellurides [96–99] .…”
Section: Preparations Of Telluride‐based Materialsmentioning
confidence: 99%
“…MoTe 2 has recently emerged as a promising material owing to its unique semi‐metallic and semiconducting properties. Naylor et al [93] . utilized the CVD approach for producing high‐quality 2H and 1T’‐ MoTe 2 films with a uniform crystal structure.…”
Section: Preparations Of Telluride‐based Materialsmentioning
confidence: 99%
“…Among all the growth methods, CVD is identified as a relatively controllable approach for fabricating large‐area few‐layer thin films or 2D crystals. [ 78–83 ] Many 2D MTACs can be fabricated by CVD technique which is a well‐established process of semiconductor fabrication and has good scalability. [ 84–90 ] The presence of a special vapor state in CVD makes them very sensitive to fluctuations in growth conditions, including the precursors, substrates and temperature.…”
Section: Preparationmentioning
confidence: 99%