2019
DOI: 10.1039/c8nr07133k
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2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration

Abstract: A novel photo-electronic hybrid-integrated synaptic device based on a 2D MoS2 phototransistor gated by the electric-double-layer biopolymer electrolyte (sodium alginate) is proposed.

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Cited by 205 publications
(206 citation statements)
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“…Particularly, photonic synapse devices have received attention because they have several advantages compared to the electronic synapse devices, such as wide bandwidth, low crosstalk, and low power consumption characteristics 18–28. Therefore, researchers have attempted to mimic synaptic behaviors by utilizing optical stimulation and photonic synapse devices have been realized with various materials such as carbon nanotubes,29,30 oxide semiconductors,18,19,25,31,32 perovskite quantum dots,21,33 2D materials,23,24,27,28,34,35 and hybrid perovskites 20,26,36. These devices have demonstrated synaptic functions, such as short‐term plasticity (STP), paired‐pulse facilitation (PPF), long‐term plasticity (LTP), STP‐to‐LTP transition, and spike‐timing‐dependent plasticity by optical stimulation.…”
Section: Figurementioning
confidence: 99%
“…Particularly, photonic synapse devices have received attention because they have several advantages compared to the electronic synapse devices, such as wide bandwidth, low crosstalk, and low power consumption characteristics 18–28. Therefore, researchers have attempted to mimic synaptic behaviors by utilizing optical stimulation and photonic synapse devices have been realized with various materials such as carbon nanotubes,29,30 oxide semiconductors,18,19,25,31,32 perovskite quantum dots,21,33 2D materials,23,24,27,28,34,35 and hybrid perovskites 20,26,36. These devices have demonstrated synaptic functions, such as short‐term plasticity (STP), paired‐pulse facilitation (PPF), long‐term plasticity (LTP), STP‐to‐LTP transition, and spike‐timing‐dependent plasticity by optical stimulation.…”
Section: Figurementioning
confidence: 99%
“…[33,34] This low resistivity value is due to a high carrier concentration, where the Fermi level (E f ) is located above the conduction level (E c ) as shown in Figure 2e(left). [39,40] A very large anticlockwise hysteresis window is observed in our vertical transistor due to mobile ions in the SA electrolyte. [33,35,36] When oxygen is injected during this process, the oxygen vacancy is occupied, thereby leading to a decrease in the carrier concentration and a downward shift in E f , as illustrated in Figure 2e(right).…”
mentioning
confidence: 73%
“…In our previous work, the SA electrolyte films have been proposed as dielectrics for the formation of electric double layer (EDL) effect with a very high capacitance. [39,40] A very large anticlockwise hysteresis window is observed in our vertical transistor due to mobile ions in the SA electrolyte. [41,42] Here, leakage currents are measured with different areas of the drain electrode, as illustrated in Figure S11 (Supporting Information).…”
mentioning
confidence: 73%
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