2D CMOS integrated magnetometer based on the miniaturized circular vertical Hall device

Banjevic, M.; Furrer, B.; Popović, R.S.

doi:10.1109/sensor.2009.5285857

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…(2) One can avoid the two ends of the Hall tub by using a ring-shaped Hall effect region with eight or more contacts [6]. Not all of these contacts are used simultaneously: in [7] one uses five consecutive contacts during a first phase like in the 5C-VHall device, and during subsequent operating phases the group of five contacts is shifted (counter)clockwise.…”

Section: The Role Of Symmetrymentioning

confidence: 99%

Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme

Ausserlechner

2016

Journal of Sensors

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This paper discusses properties of Hall effect sensors with only three terminals and compares them to conventional four-terminal devices. It covers both Horizontal and Vertical Hall effect devices. Their Hall-geometry factor is computed analytically. Several modes of operation are proposed and their signal-to-noise ratio is compared. A six-phase offset cancellation scheme is developed. All theoretical results are checked by measurements. The residual offset of Vertical Hall effect devices with three contacts is found to be smaller than the offset of conventional Vertical Hall effect devices with five contacts.

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Section: The Role Of Symmetrymentioning

confidence: 99%

Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme

Ausserlechner

2016

Journal of Sensors

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“…At present, magnetic field sensors include the Hall element, giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), magnetic sensitive diodes (MSD), silicon magnetic sensitive transistors (SMST), and so on [ 1 , 2 , 3 , 4 ]. With the development of microelectromechanical systems (MEMS) technology, magnetic field sensors have achieved a three-dimensional structure, miniaturization and integration and have a wide range of applications, such as industrial, military, aerospace and other areas [ 5 , 6 , 7 , 8 ]. In 2012, Chih-Ping Yu et al proposed a two-dimensional difference folded Hall device, which integrated the lateral magnetic transistor (LMT) with the magnetoresistor (MR) [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

Zhao

Jin

Deng

et al. 2018

Sensors

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A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity.

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“…Many different versions of 2D and 3D Hall microsensors are available for this purpose. Some of them [1][2][3][4] use measurement principles based on complex trigonometric calculation algorithm for angle evaluation. As a result, the angle extraction circuit is very complicated.…”

Section: Introductionmentioning

confidence: 99%

“…This circumstance, as well as the stronger requirements for precise matching of the characteristics of the corresponding sensor channels increases fabrication cost. A circular 2D CMOS integrated magnetometer based on 8-contact circular parallel-field Hall device is presented in [3]. Due to the very small number of ring periphery contacts (8 only) and the five-contact parallel-field Hall sensor used, the magnetic sensitivity S of such magnetometer is relatively low: for example, it is about 30% lower compared to five-contact Hall transducers.…”

Section: Introductionmentioning

confidence: 99%

Angle Measurement and 3D Magnetic Field Sensing Using Circular Hall Microsensor

Lozanova

Noykov

Ivanov

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:A new three-axis magnetometer for both 3-D magnetic field sensing and contactless in-plane 360° absolute angle encoding has been developed. The magnetometer is based on the Hall effect and consists of a circular in-plane sensitive CMOS Hall-effect microsensor, biasing and signal conditioning circuits. The sensing device contains a narrow n-well ring with a chain of contacts positioned radial on the ring. The signal conditioning circuit gives two output analogue signals: a voltage Vz, proportional to the magnetic field component Bz, and a sine wave function Vxy(t). The magnitude of the in-plane magnetic field B(x,y) is directly proportional to the sine amplitude and the phase Ψ corresponds to the angle between the applied in-plane magnetic field and a reference direction.

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2D CMOS integrated magnetometer based on the miniaturized circular vertical Hall device

Cited by 12 publications

References 6 publications

Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme

Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

Angle Measurement and 3D Magnetic Field Sensing Using Circular Hall Microsensor

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