2D Boron Nitride Heterostructures: Recent Advances and Future Challenges

Abstract

Hexagonal boron nitride (h‐BN) is one of the most attractive 2D materials because of its remarkable properties. Combining h‐BN with other components (e.g., graphene, carbonitride, semiconductors) to form heterostructures opens new perspectives to developing advanced functional devices. In this review, the state‐of‐the‐art in h‐BN heterojunctions is highlighted. The preparation of high‐quality 2D h‐BN structures with fewer defects can maximize its intrinsic properties, such as thermal conductivity and electrical insulation, which are particularly important in 2D van der Waals electronics. On the other hand, the controlled introduction in 2D h‐BN of multiple defects creates new properties and advanced functions. In this last case, only through a better understanding of the nature and function of defects, it is possible to develop advanced applications based on h‐BN heterostructures. Engineering of the heterojunctions, such as the design of bonding at the interfaces, also plays a primary role. Several applications are proposed for h‐BN heterostructures, mostly in sensing and photocatalysis, and some new perspectives worth further studies are opened. Finally, the current challenges and the rising opportunities for the future developments of next‐generation h‐BN heterostructures are discussed.

Experimental progress on the emergent infinite-layer Ni-based superconductors

“…Unfortunately, no superconductivity has been achieved yet in these compounds as well. These experimental results may suggest the vital role of interface effects in this type of thin-film heterostructures similar as that in other oxide [122,123] and two-dimensional-material-based heterostructures [128,129].…”

Robust photocatalytic activity of two-dimensional h-BN/Bi2O3 heterostructure quantum sheets

“…[16][17][18][19][20][21][22] The enhanced catalytic performance is usually attributed to the promotion of photogenerated carriers transfer and migration rate, the inhibition of e À -h + pairs recombination, the expansion of light response range and the increase of active sites of surface adsorbed reactants. 23,24 However, there is still a lack of strong theoretical analysis and experimental evidence. Indeed, the structure of BN plays an important role in BN/semiconductor heterostructures, but its inherent semiconductor characteristics and band gap adjustment are oen ignored.…”

Reconfigurable InSe Electronics with van der Waals Integration

“…The hBN flake under the InSe channel played an important role in the polarity control by avoiding the influence of substrate scattering. [ 36 ] The thicknesses of these flakes were determined by the optical contrast and verified by atomic force microscopy. Raman spectrum with 532 nm laser excitation was measured to ascertain the InSe quality, as shown in Figure S1 (Supporting Information).…”