High-performance photodetector based on hybrid of MoS₂ and reduced graphene oxide

Abstract

2D materials are a promising new class of materials for next generation optoelectronic devices owing to their appealing optical and electrical properties. Pristine molybdenum disulfide (MoS) is widely used in next generation photovoltaic and optoelectronic devices, but its low photo-dark current ratio prevents its use in highly efficient photo detection applications. Here, we decorated crumpled reduced graphene oxide (rGO) particles on a large-area vertically aligned MoS flake network to enhance the performance of the MoS-based photodetector by forming multiple nanoscale p-n heterojunctions. The rGO/MoS device exhibited a significantly improved photoresponsivity of ∼2.10 A W along with a good detectivity of ∼5 × 10 Jones (Jones = cm Hz/W) compared to that of the pristine MoS photodetector in ambient atmosphere. Moreover, the rGO/MoS photodetector showed a fast response of ∼18 ms with excellent stability and reproducibility in ambient air even after three months. The high performance of the photodetector is attributed to enhanced photoexcited carrier density and suppressed photo generated electron-hole recombination due to the strong local built-in electric field developed at the rGO/MoS interface. Our results showed that integration of rGO with MoS provides an efficient platform for photo detection applications.

Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure

“…Instead of using the multiple stacking method, Zhang et al thermally deposited MoO 3 nanofilms onto MoS 2 /SiO 2 /Si FET with few-layered graphene films working as transferring electrodes above MoO 3 , thus forming a graphene/MoO 3 /MoS 2 heterostructure photodetector with high photoresponsivity (670 mA W –1 ) and detectivity (4.77 × 10 10 Jones) . Kumar et al adapted a reduced graphene oxide/MoS 2 heterostructure to form p–n junctions for better photodetection performances, achieving high photoresponsivity (∼2.1 A W –1 ) and detectivity (∼5 × 10 11 Jones) . Stacking of different 2D materials to form a heterostructure is advantageous for obtaining favorable optoelectronic performance characteristics such as fast response times.…”

“…32 Kumar et al adapted a reduced graphene oxide/MoS 2 heterostructure to form p−n junctions for better photodetection performances, achieving high photoresponsivity (∼2.1 A W −1 ) and detectivity (∼5 × 10 11 Jones). 33 Stacking of different 2D materials to form a heterostructure is advantageous for obtaining favorable optoelectronic performance characteristics such as fast response times. However, the interface limitations such as lattice mismatching and relatively high carrier recombination mean that it remains challenging to fabricate better performing devices.…”

Enhanced Photoresponse and Wavelength Selectivity by SILAR-Coated Quantum Dots on Two-Dimensional WSe2 Crystals

“…Wavelength selectivity is one of the most important challenging and vital parameters in photodetectors, and our sample shows better selectivity compared to other reported devices. Photodetectors based on TMDs and their heterostructure − have lower responsivity in the visible region compared to the samples of the current study. Although those photodetectors based on CdS obtained through a more complicated fabrication procedure presented higher photoresponsivity, the response time is still higher than our introduced SILAR-coated devices.…”

Ultra‐Rapid Removal of Pb(II) Ions by a Nano‐MoS2 Decorated Graphene Aided by the Unique Combination of Affinity and Electrochemistry

“…[ 57 ] The d ‐spacing value of 0.41 nm suggests the formation of prGO. The relatively higher d ‐value than Gr [ 57–61 ] is attributed to the attachment of nano‐MoS 2 on the prGO sheets. Further, the peaks at 36.7°, 43.6°, 50.9°, and 59.6°, corresponding to the (100), (006), (105), and (110) planes of MoS 2 , [ 16,54,57,62 ] confirm the formation of MoS 2 .…”