2018
DOI: 10.1126/sciadv.aap7529
|View full text |Cite
|
Sign up to set email alerts
|

Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog

Abstract: We propose a new III–V semiconductor system hosting a large-gap quantum spin Hall insulator and unconventional metal states.

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
43
0
1

Year Published

2019
2019
2023
2023

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 41 publications
(45 citation statements)
references
References 42 publications
(80 reference statements)
1
43
0
1
Order By: Relevance
“…Experimental relevance and summary.-Now we briefly discuss the experimental relevance for our proposal. QSHIs with large inverted gaps [44][45][46][47][48][49][50][51][52][53][54][55][71][72][73] in proximity to cuprate or iron-based superconductors [38][39][40][57][58][59][60][61] could provide promising platforms to detect our predictions. For concreteness, we take the inverted InAs/GaSb bilayer and WTe 2 monolayer to estimate µ c x(y) .…”
Section: Arxiv:190509308v1 [Cond-matsupr-con] 22 May 2019mentioning
confidence: 99%
See 1 more Smart Citation
“…Experimental relevance and summary.-Now we briefly discuss the experimental relevance for our proposal. QSHIs with large inverted gaps [44][45][46][47][48][49][50][51][52][53][54][55][71][72][73] in proximity to cuprate or iron-based superconductors [38][39][40][57][58][59][60][61] could provide promising platforms to detect our predictions. For concreteness, we take the inverted InAs/GaSb bilayer and WTe 2 monolayer to estimate µ c x(y) .…”
Section: Arxiv:190509308v1 [Cond-matsupr-con] 22 May 2019mentioning
confidence: 99%
“…This condition indeed corresponds to the QSHI phase with a large inverted gap or equivalently an indirect bulk gap. It is likely realized in the inverted InAs/GaSb bilayer [71][72][73], WTe 2 monolayer [44][45][46][47][48], functionalized MXene [49,50], Bismuthene on SiC [51,52], PbS monolayer [53][54][55], etc. To test the analytical results, we discretize the model (1), put it on a lattice, choose a proper set of parameters (satisfying inequality (8)) and calculate the energy spectrum in a ribbon geometry.…”
Section: Arxiv:190509308v1 [Cond-matsupr-con] 22 May 2019mentioning
confidence: 99%
“…The light-hole contribution is only relevant for wave vectors away from the Γ-point and/or energies well below the hybridization region. This means that in order to correctly describe the low-energy spectrum of such SQW there is no need to include the light-hole band although the need to include one extra electron band [7].…”
Section: Massless Dirac Fermionsmentioning
confidence: 99%
“…Furthermore, electrical control of the topological phase transition is possible [37,38,39] and has been reported for InAs/GaSb AQWs [6,40,41,42,43]. Although very recently Krishtopenko and Teppe [7] proposed that threelayer InAs/GaSb quantum well (QWs) hosts topological phase transition, their focus was on the strain engineering of the band gap of the InAs/GaInSb QWs which they claim is of the order of 60 meV. Instead, we focus on the electrical control, of the phase transition and the behavior of the helical edge states in such three-layer QWs, using an applied electric field but neglecting e-e interaction and disorder effects.…”
Section: Introductionmentioning
confidence: 99%
“…[2][3][4][5] A fundamentally important perspective of application for these materials is their use as quantum spin Hall insulator (QSHI) and three-dimensional (3D) topological insulators, opening possibilities for low-power nanoscale electronic and spintronic applications. [6,7] In this sense, graphene alone is deficient, because its low spin-orbit coupling (SOC) gives origin to a small bulk band gap of the order of 10 −3 meV. [8,9] In the group of materials that can be exfoliated into monolayers and that have been predicted to be QSHI are the 1T ′ polytypes of some transition metal dichalcogenides, [10] with scanning tunneling microscopy work detecting edge states for WTe 2 , [11,12] MoS 2 , [13] and WSe 2 .…”
Section: Introductionmentioning
confidence: 99%