Publisher Correction: Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

Cecot, Monika; Karwacki, Łukasz; Skowroński, Witold; Kanak, J.; Wrona, Jerzy; Żywczak, Antoni; Yao, Lide; Dijken, Sebastiaan van; Barnaś, J.; Stobiecki, T.

doi:10.1038/s41598-018-20353-w

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“…The linearly fitted curves in Figure c,d indicate that Joule heating in this experiment does not play an important role in the final results. In addition, if we assume that all spin currents, exerted on the FM layer, are generated from the HM layer, eq can be used to calculate the spin–torque efficiency θ SH . ,, In eq , ℏ is the Planck constant, M s is the saturation magnetization, e is the electronic charge, t FM is the thickness of the FM layer, and J is the current density. In this work, the current density is assumed to flow through the multilayer uniformly.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Zhao

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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Using a heavy-metal (HM) alloy layer in spin−orbit torque (SOT)based devices is an effective method for obtaining a high current−spin conversion efficiency θ SH . In this work, SOT-based spintronic devices with a Pt 100−x Ru x -alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θ SH and to observe the process of current-induced magnetization switching. Both the highest θ SH of 0.132 and the lowest critical current density (J c ) of 8 × 10 5 A/cm 2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii−Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt−Ru alloyed HM layer is an effective route for SOT application with enhanced performance.

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Section: Resultsmentioning

confidence: 99%

“…In addition, if we assume that all spin currents, exerted on the FM layer, are generated from the HM layer, eq 5 can be used to calculate the spin−torque efficiency θ SH . 2,50,51…”

mentioning

confidence: 99%

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Zhao

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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Publisher Correction: Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

Abstract: The original version of this Article contained a typographical error in the spelling of the author Sebastiaan van Dijken, which was incorrectly given as Sebastiaan Dijken. This has now been corrected in the PDF and HTML versions of the Article.

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Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

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Publisher Correction: Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

Abstract: The original version of this Article contained a typographical error in the spelling of the author Sebastiaan van Dijken, which was incorrectly given as Sebastiaan Dijken. This has now been corrected in the PDF and HTML versions of the Article.

Cited by 1 publication

References 0 publications

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt100–xRux/[CoNi]/Ru Multilayer for Spintronic Devices

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt100–xRux/[CoNi]/Ru Multilayer for Spintronic Devices

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Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices