Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application

Abstract

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor

“…In spintronics devices, changing the magnetization directions is necessary to write information, which accompanies the power consumption. The controllability of the magnetic anisotropy by the gate voltage is more advantageous in spintronics devices than other methods such as optical control of the magnetic properties 28 because we can expect the reduction of the power consumption required for writing information, since the application of the gate voltage does not accompany joule heating. Furthermore, the coercive force of the top GaMnAs layer, which has a larger coercivity than the bottom GaMnAs layer, increases as V GS is changed from 0 V to −10 V (the red-colored region slightly expands outward).…”

Cumulative Effects of Laser and Spin–Orbit Interaction (SOI) on the Thermal Properties of Quantum Pseudo-dot

“…This property of spin can then enable the realization of qubit (two-level system). Some semiconductors such as InAs are characterized by a strong spin-orbit interaction, and they have played an important role in spintronic devices because they can control the degree of spin freedom of the electron [36][37][38][39][40][41]. Many researchers have defined entropy differently in recent years, many works have been carried out on the thermodynamic quantities of nanostructures, and this is due to their large technological applications [42][43][44][45].…”

Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

“…3,10,13 The coupling type, e.g., ferromagnetic (FM) or antiferromagnetic (AFM), reflects the band structure of the spacer around the Fermi surface. [14][15][16] For IEC through metallic spacers, the periodic oscillation and fast decay of coupling strength with the spacer thickness 17 have been explained by the Rudermann-Kittel-Kasuya-Yosida (RKKY) theory, 18 which originates from interactions between localized d-or f-orbit electrons via the conduction electrons.…”