2019 IEEE International Solid- State Circuits Conference - (ISSCC) 2019
DOI: 10.1109/isscc.2019.8662434
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29.2 A Scalable Quantum Magnetometer in 65nm CMOS with Vector-Field Detection Capability

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Cited by 7 publications
(6 citation statements)
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“…This is challenging since any heatsink must be thin to minimize sample-diamond separation and also electrically insulating. We note that there has been important parallel effort in constructing integrated miniaturized sensors [46][47][48]. Although their reported sensitivity is several orders of magnitude worse, it is possible that by using techniques from semiconductor fabrication (particularly efficient heatsinking) that these devices may have a significant role to play in future NV biosensing.…”
Section: Discussionmentioning
confidence: 99%
“…This is challenging since any heatsink must be thin to minimize sample-diamond separation and also electrically insulating. We note that there has been important parallel effort in constructing integrated miniaturized sensors [46][47][48]. Although their reported sensitivity is several orders of magnitude worse, it is possible that by using techniques from semiconductor fabrication (particularly efficient heatsinking) that these devices may have a significant role to play in future NV biosensing.…”
Section: Discussionmentioning
confidence: 99%
“…In [59], [60], the above hybrid CMOS-NV architecture is extended to a scalable design with enhanced sensitivity. The design shown in Fig.…”
Section: ) Research At Mitmentioning
confidence: 99%
“…In this section, the design details of a new-generation CMOS-NV magnetometer [12] are provided. The highly scalable architecture of our CMOS-NV magnetometer allows for the microwave driving of NVs over a large area.…”
Section: A Scalable Cmos-nv Magnetometer For Enhanced Sensitivitymentioning
confidence: 99%
“…However, insufficient pump light rejection and limited area of homogeneous microwave driving fields for the ODMR measurements posed a major limitation on achievable magnetic field sensitivity. Here, we present a new CMOS prototype that addresses these problems to achieve a >100× sensitivity improvement, down to 245 nT/Hz 1/2 [12].…”
Section: Introductionmentioning
confidence: 99%