29.1 A 28nm Bulk-CMOS 4-to-8GHz ¡2mW Cryogenic Pulse Modulator for Scalable Quantum Computing

Bardin, Joseph C.; Jeffrey, E.; Lucero, Erik; Huang, Trent; Naaman, Ofer; Barends, R.; White, T.; Giustina, Marissa; Sank, D.; Roushan, P.; Arya, Kunal; Chiaro, Benjamin; Kelly, J.; Chen, Jimmy; Burkett, Brian; Chen, Yu; Dunsworth, A.; Fowler, Austin G.; Foxen, Brooks; Gidney, Craig; Graff, Rob; Klimov, Paul V.; Mutus, J.; McEwen, Matt; Megrant, A.; Neeley, M.; Neill, Charles; Quintana, Chris; Vainsencher, A.; Neven, Hartmut; Martinis, John M.

doi:10.1109/isscc.2019.8662480

Cited by 102 publications

(51 citation statements)

References 6 publications

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“…The additional power consumed by the FET at deep-cryogenic temperatures as a result of ∆SS is crucial for the desired scalability of quantum computers that is expected from co-integration of spin qubits in Si with FET-based control circuits. [23][24][25][26][27][28][29][30][31][32][33][34] a) Electronic mail: arnout.beckers@epfl.ch…”

Section: Introductionmentioning

confidence: 99%

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Beckers

Jazaeri

Enz

2020

IEEE Electron Device Lett.

149

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Measurements in field-effect transistors have indicated that the Boltzmann thermal limit of the subthreshold swing, (k B T /q) ln 10, is not followed down to deep-cryogenic temperatures. Instead, there is a nonlinear deviation from this limit which cannot be explained with the present theory. In this paper, we derive a new theory which resolves this discrepancy by including the source-drain tunneling through a band tail. We demonstrate that the additional tunneling component of the current becomes dominant over the diffusion current at a sufficiently low cryogenic temperature. A band tail in the electrostatics, with only diffusion transport, does not explain the excess subthreshold swing at deep-cryogenic temperatures, neither does only self-heating, nor does a nonuniform density of interface traps in the bandgap with Fermi-Dirac occupation. The proposed theory is experimentally validated with our measurements in advanced CMOS technology down to 4.2 K. Finally, we assess the obtained densities of interface traps in the presence of band-tail tunneling.

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Section: Introductionmentioning

confidence: 99%

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Beckers

Jazaeri

Enz

2020

IEEE Electron Device Lett.

149

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“…To address this, a fully-integrated cryogenic control system close to the qubits has been proposed [1]. A cryogenic pulse modulator has been demonstrated [2], however its scalability is limited by the need of one LO and cable per qubit, and external circuitry for LO leakage cancellation, as the LO is at the qubit frequency. Moreover, the used fixed-length symmetric pulses limit theoretically achievable operation fidelity and compatible qubit technologies.…”

mentioning

confidence: 99%

“…In this work, we present a scalable controller that (a) exploits FDMA to reduce the number of RF-cables per qubit ( Fig. 19.1.1), (b) features arbitrary I/Q pulse generation for high-fidelity operation over a wide frequency (>4× higher than [2]) and output power range to support both spin qubits and transmons, and (c) can be directly integrated in an existing quantum control stack thanks to a digitallyintensive architecture with integrated instruction set.…”

mentioning

confidence: 99%

19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

Patra

Dijk

Subramanian

et al. 2020

2020 IEEE International Solid- State Circuits Conference - (ISSCC)

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“…Thus, we advocate the integration of qubits and control electronics inside the refrigerator [2]. Complementary Metal Oxide Semiconductor (CMOS) circuits operating at cryogenic temperatures (Cryo-CMOS) have been proposed for the implementation of a scalable control and readout interface of cryogenic quantum processors [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

Patra

Mehrpoo

Ruffino

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

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29.1 A 28nm Bulk-CMOS 4-to-8GHz ¡2mW Cryogenic Pulse Modulator for Scalable Quantum Computing

Cited by 102 publications

References 6 publications

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

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