Electrical Contacts in Monolayer Arsenene Devices

Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Lin, Xingyi; Liu, Junku; Pan, Feng; Lü, Jing

doi:10.1021/acsami.7b08513

Cited by 82 publications

(76 citation statements)

References 81 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is not yet any experimental report of a single layer honeycomb structure formed by As, i.e., arsenene. Theoretically, single layer arsenene prefers a buckled honeycomb structure 7 , while puckered [18][19][20][21] and planar 18 18,19,21,22,[24][25][26][27] and between 2.0 and 2.49 eV when Heyd-Scurseria-Ernzerhof hybrid functionals (HSE/HSE06) were employed 17,19,25 . Strain effects on the electronic structure have been discussed in several papers 17 -19,,23,25,28 .…”

mentioning

confidence: 99%

Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material

et al. 2020

View full text Add to dashboard Cite

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional materials. Theoretical investigations predict high electron mobility, large band gaps, band gap tuning by strain, formation of topological phases, quantum spin Hall effect at room temperature, and superconductivity amongst others. Here, we report a successful formation of freestanding like monolayer arsenene on Ag(111). This was concluded from our experimental atomic and electronic structure data by comparing to results of our theoretical calculations. Arsenene forms a buckled honeycomb layer on Ag(111) with a lattice constant of 3.6 Å showing an indirect band gap of ~1.4 eV as deduced from the position of the Fermi level pinning.The isolation of two-dimensional (2D) carbon in the form of a single layer honeycomb structure (graphene) 1 was the starting point of today's intensive research on various 2D materials. In particular, the electronic properties, i.e., the high conductivity in combination with the linear dispersion of the -band, forming a Dirac cone, are highly interesting for applications in nanoelectronics 2 . However, this utilization of graphene is severely hampered by the lack of an intrinsic band gap, which it shares with graphene like structures of other group IV atoms, i.e., Si, Ge, and Sn 3 .

show abstract

mentioning

confidence: 99%

Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material

et al. 2020

View full text Add to dashboard Cite

show abstract

“…It has been shown previously that strain engineering can tune the band gaps and band alignments of monolayers [53], which further enhances the scope and usage of studied monolayer allotropes of arsenic for visible light driven photocatalytic water splitting. Despite known toxicity of arsenene, it has emerged as a promising material for the next-generation electronic and optoelectronic applications [54][55]. Recent fabrication of 2D arsenene nanosheets [56] is likely to pave the way for the use of arsenene in water splitting photocatalysis as suggested by this work.…”

Section: Potential Application In Photocatalytic Water Splittingmentioning

confidence: 93%

Two dimensional allotropes of arsenene with a wide range of high and anisotropic carrier mobility

Jamdagni

Thakur

Kumar

et al. 2018

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Considering the rapid development of experimental techniques for fabricating 2D materials in recent years, various monolayers are expected to be experimentally realized in the near future.Motivated by the recent research activities focused on the honeycomb arsenene monolayers, stability and carrier mobility of non-honeycomb and porous allotropic arsenene are determined using first principles calculations. In addition to five honeycomb structures of arsenene, a total of eight other structures are considered in this study. An extensive analysis comprising energetics, phonon spectra and mechanical properties confirms that these structures are energetically and dynamically stable. All these structures are semiconductors with a broad range of band gap varying from ~1 eV to ~2.5 eV. Significantly, these monolayer allotropes possess anisotropic carrier mobilities as high as several hundred cm 2 V -1 s -1 which is comparable with the well-known 2D materials such as black phosphorene and monolayer MoS2. Combining such broad band gaps and superior carrier mobilities, these monolayer allotropes can be promising candidates for the superior performance of the next generation nanoscale devices. We further explore these monolayer allotropes for photocatalytic water splitting and find that arsenene monolayers have potential for usage as visible light driven photocatalytic water splitting.

show abstract

“…With increasing layers, this bandgap lowers significantly as is the case with bulk black phosphorus has a bandgap of 0.3 eV . Arsenene has been predicted to possess an indirect, quasi‐particle bandgap of ≈2.5 eV while antimonene is predicted to have an indirect bandgap around 2.3 eV . Bismuthene, their heavier counterpart, has been predicted to achieve room‐temperature topological insulating behavior (see below) with a predicted spin–orbit monolayer bandgap of ≈0.3 eV and measured bandgap of 0.67 eV, which disappears in multilayer bismuthene as it becomes metallic.…”

Section: Unique Properties Of Elemental 2d Materialsmentioning

confidence: 96%

Emerging Applications of Elemental 2D Materials

et al. 2019

View full text Add to dashboard Cite

As elemental main group materials (i.e., silicon and germanium) have dominated the field of modern electronics, their monolayer 2D analogues have shown great promise for next‐generation electronic materials as well as potential game‐changing properties for optoelectronics, energy, and beyond. These atomically thin materials composed of single atomic variants of group III through group VI elements on the periodic table have already demonstrated exciting properties such as near‐room‐temperature topological insulation in bismuthene, extremely high electron mobilities in phosphorene and silicone, and substantial Li‐ion storage capability in borophene. Isolation of these materials within the postgraphene era began with silicene in 2010 and quickly progressed to the experimental identification or theoretical prediction of 15 of the 18 main group elements existing as solids at standard pressure and temperatures. This review first focuses on the significance of defects/functionalization, discussion of different allotropes, and overarching structure–property relationships of 2D main group elemental materials. Then, a complete review of emerging applications in electronics, sensing, spintronics, plasmonics, photodetectors, ultrafast lasers, batteries, supercapacitors, and thermoelectrics is presented by application type, including detailed descriptions of how the material properties may be tailored toward each specific application.

show abstract

Electrical Contacts in Monolayer Arsenene Devices

Cited by 82 publications

References 81 publications

Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material

Experimental evidence of monolayer arsenene: an exotic 2D semiconducting material

Two dimensional allotropes of arsenene with a wide range of high and anisotropic carrier mobility

Emerging Applications of Elemental 2D Materials

Contact Info

Product

Resources

About