III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus‐Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Günther

doi:10.3390/s17081788

Cited by 71 publications

(46 citation statements)

References 80 publications

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“…Integrated optical light sources are typically based on quantum cascade or interband cascade lasers (QCL, ICL) [24,111]. The heterogeneous integration of those devices with Si-Ph platforms allows for full on-chip gas detection systems [112][113][114]. The combination of high quality active and passive components allows the use of all the discussed advanced spectroscopic methods: balanced detection, WMS and cavity enhanced spectroscopy.…”

Section: Mid-wavelength Infrared (Mir)mentioning

confidence: 99%

Opportunities for photonic integrated circuits in optical gas sensors

Hänsel

Heck

2020

J. Phys. Photonics

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In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing applications is discussed. Optical detection systems can be found at the high-end of the currently available gas detectors, and PIC-based optical spectroscopic devices promise a significant reduction in size and cost. The performance of such devices is reviewed here. This discussion is not limited to one semiconductor platform, but includes several available platforms operating from the visible wavelength range up to the long wavelength infrared. The different platforms are evaluated regarding their capabilities in creating a fully integrated spectroscopic setup, including light source, interaction cell and detection unit. Advanced spectroscopy methods are assessed regarding their PIC compatibility. Based on the comparison of PICs with state-of-the-art bulk optical devices, it can be concluded that they can fill the application space of compact and low cost optical gas sensors.

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Section: Mid-wavelength Infrared (Mir)mentioning

confidence: 99%

Opportunities for photonic integrated circuits in optical gas sensors

Hänsel

Heck

2020

J. Phys. Photonics

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“…A significant challenge however is the integration of on-chip pump source in SOI based mid-IR PICs. Although hybrid integration of near-IR sources in SOI platform is now a mature technology, there have been few demonstrations to extend this integration into mid-IR [13]. More recently, we have seen integration of QCL on Si-on-N-on-insulator (SONOI) [14].…”

Section: Introductionmentioning

confidence: 99%

Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing

et al. 2018

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Silicon-on-insulator is an attractive choice for developing mid-infrared photonic integrated circuits. It benefits from mature fabrication technologies and integration with on-chip electronics. We report the development of SOI channel and rib waveguides for mid-infrared wavelengths centered at 3.7 μm. Propagation loss of ∼1.44 dB/cm and ∼1.2 dB/cm has been measured for TE and TM polarizations in channel waveguides, respectively. Similarly, propagation loss of ∼1.39 dB/cm and ∼2.82 dB/cm has been measured for TE and TM polarized light in rib waveguides. The propagation loss is consistent with the measurements obtained using a different characterization setup and for the same waveguide structures on a different chip. Given the tightly confined single-mode in our 400 nm thick Si core, this propagation loss is among the lowest losses reported in literature. We also report the development of Ge-on-SOI strip waveguides for mid-infrared wavelengths centered at 3.7 μm. Minimum propagation loss of ∼8 dB/cm has been measured which commensurate with that required for high power midinfrared sensing. Ge-on-SOI waveguides provide an opportunity to realize monolithically integrated circuit with on-chip light source and photodetector.

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“…One of the challenges that had to be addressed in this domain is to provide on-chip and low cost optical sources. It has been shown that group III-V compounds interband cascade and quantum cascade devices can provide MIR sources [6][7][8][9][10]. However, these compounds are not compatible to be efficiently grown onto the silicon platform which make the device manufacturing complicated and expensive.…”

Section: Introductionmentioning

confidence: 99%

Narrow-Band Thermal Photonic Crystal Emitter for Mid-Infrared Applications

2018

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Mid-infrared (MIR) on-chip sensing on Si has been a progressive topic of research in the recent years due to excitation of vibrational and rotational bands specific to materials in this range and their immunity against visible light and electromagnetic interferences. For on-chip applications, integration of all the optical components including the MIR source is crucial. In this work, we introduce a slab photonic crystal (PhC) thermal source where the birthplace and the filtering of the photons occur in the same region. Due to the forbidden frequency bands and high density of states in the band edge, it provides electric efficiency and filtering performance.

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III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Cited by 71 publications

References 80 publications

Opportunities for photonic integrated circuits in optical gas sensors

Opportunities for photonic integrated circuits in optical gas sensors

Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing

Narrow-Band Thermal Photonic Crystal Emitter for Mid-Infrared Applications

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