2017
DOI: 10.1039/c7nr90157g
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Correction: First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator

Abstract: Correction for 'First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator' by Run-Wu Zhang, et al., Nanoscale, 2017, 9, 8207-8212.

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“…First-principles calculations combined with HTS are used to identify quantum spin Hall insulators, materials with a specific type of topological order that could be used in spintronic devices [113][114][115][116][117][118].…”
Section: High-throughput Screeningmentioning
confidence: 99%
“…First-principles calculations combined with HTS are used to identify quantum spin Hall insulators, materials with a specific type of topological order that could be used in spintronic devices [113][114][115][116][117][118].…”
Section: High-throughput Screeningmentioning
confidence: 99%
“…So, here, we will speak about bismuthene and, similarly to hydrogenated graphene or graphane, we may refer to hydrogen terminated bismuthene as bismuthane [100]. In the same logic, the porous allotrope of a Bi monolayer is denominated as bismuthylene [105]. Electronic structure of free-standing bismuthene has been addressed in [101,104] and that of double layer bismuthene in [106].…”
Section: Bismuthene: the Ultimate Layermentioning
confidence: 99%