Racetrack memory based on in-plane-field controlled domain-wall pinning

Ummelen, FC Fanny; Swagten, Hjm Henk; Koopmans, B.

doi:10.1038/s41598-017-00837-x

Cited by 21 publications

(20 citation statements)

References 36 publications

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“…One possible route to the development of new recording technologies is based on thin magnetic materials [1][2][3][4][5][6][7]. The basic understanding of magnetization reversal mechanisms, which are dominated by domain-wall dynamics, is thus critical.…”

Section: Introductionmentioning

confidence: 99%

Statistically meaningful measure of domain-wall roughness in magnetic thin films

et al. 2020

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Domain walls in magnetic thin films display a complex dynamical response when subject to an external drive. It is claimed that different dynamic regimes are correlated with the domain-wall roughness, i.e., with the fluctuations of domain-wall position due to the inherent disorder in the system. Therefore, key to understanding the dynamics of domain walls is to have a statistically meaningful measure of the domain-wall roughness. Here we present a thorough study of the roughness parameters, i.e., roughness exponent and roughness amplitude, for domain walls in a ferrimagnetic GdFeCo thin film in the creep regime. Histograms of roughness parameters are constructed with more than 40 independent realizations under the same experimental conditions, and the average values and standard deviations are compared in different conditions. We found that the most prominent feature of the obtained distributions is their large standard deviations, which is a signature of large fluctuations. We show that even if the roughness parameters for a particular domain wall are well known, these parameters are not necessarily representative of the underlying physics of the system. In the low field limit, within the creep regime of domain-wall motion, we found the average roughness exponent and roughness amplitude to be around 0.75 and 0.45 μm 2 , respectively. When an in-plane magnetic field is applied we observed that, even though the distributions are wide, changes in the mean values of roughness parameters can be identified; the roughness exponent decreasing to values around 0.72 while the roughness amplitude increases to 0.65 μm 2. Our results call for a careful consideration of statistical averaging over different domains walls when reporting roughness exponents.

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Section: Introductionmentioning

confidence: 99%

Statistically meaningful measure of domain-wall roughness in magnetic thin films

et al. 2020

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“…The O 1 s spectra of the Ta 2 O 5−x layers were de-convoluted to obtain two peaks at 530.5 eV at 532.0 eV 42 – 44 . The first oxygen peak depicts oxygen bonded in stoichiometric Ta 2 O 5 43 , while the second oxygen peak indicates oxygen-deficient Ta 2 O 5−x , reflecting the presence of unbonded oxygen molecules (oxygen interstitials) or oxygen vacancies. Thus, the concentrations of oxygen vacancies in the Ta 2 O 5−x films with/without the annealing process were estimated.…”

Section: Resultsmentioning

confidence: 99%

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Kim

Baek

Yang

et al. 2018

Sci Rep

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Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5−x oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5−x and TaNx layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode’s oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.

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“…Another important challenge facing STT‐MRAM is the increase of storage capacity which requires a design of smart multi‐bit per cell structures. Domain wall memory, Skyrmion‐based racetrack memory are some concepts which have the potential to increase the storage capacity …”

Section: Future Perspectivesmentioning

confidence: 99%

Recent Developments in Spin Transfer Torque MRAM

Sbiaa

Piramanayagam

2017

Physica Rapid Research Ltrs

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Spin transfer torque (STT) switching-based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non-volatile memory device in computing devices, smartphones, and so on. STT-MRAM devices with in-plane magnetization configuration have been marketed as niche products. Devices with out-ofplane magnetization are being considered for embedded memory as the first step. Aggressive goals include replacing dynamic random access memory (DRAM) with STT-MRAM. This review article introduces the basics of STT-MRAM and describes the recent progress in overcoming certain challenges such as reduction of power consumption and increase of storage density, which will make it a strong competitor for DRAM. Reduction of Spin Torque Switching CurrentThe main advantage of STT-MRAM compared to magnetic fieldbased MRAM is its scalability. For a given anisotropy energy K u , the

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Racetrack memory based on in-plane-field controlled domain-wall pinning

Cited by 21 publications

References 36 publications

Statistically meaningful measure of domain-wall roughness in magnetic thin films

Statistically meaningful measure of domain-wall roughness in magnetic thin films

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Recent Developments in Spin Transfer Torque MRAM

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