Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

Heo, Sung; Park, Hyoungsun; Ko, Dong-Su; Kim, Yong Su; Kyoung, Yong Koo; Lee, Hyung-Ik; Cho, Eunae; Lee, Hyo Sug; Park, Gyung-Su; Shin, Jai Kwang; Lee, Jieun; Jung, Keum‐Dong; Jeong, Moon-Young; Yamada, S.; Kang, Hee Jae; Choi, Byoungdeog

doi:10.1038/srep43561

Sci Rep

2017

DOI: 10.1038/srep43561

|View full text |Cite

Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

Sung Heo

Hyoungsun Park

Dong-Su Ko

et al.

Abstract: We demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/(LaO or ZrO)/SiO2 stack structures. The VFB shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO2 interface layer. The metal doping and silicate formation confirmed by using transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) line profiling, respectively. The direct work function measurement technique allowed us to make direct estimate of a … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2017

2019

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Luo

Peng

et al. 2017

Advanced Materials

View full text Add to dashboard Cite

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO films on Al O and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

show abstract

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Luo

Peng

et al. 2017

Advanced Materials

View full text Add to dashboard Cite

show abstract

Applications of surface analysis to Oxide Thin Film Devices

Kang

2019

JSA

View full text Add to dashboard Cite

Surface analysis has been applied to obtain electronic properties for ultrathin high-k dielectric gate oxide thin films, metal gate stack in CMOS, and transparent conductive oxide thin film transistors (TFTs) incorporating an oxide active channel layer. The band alignment in HfZr silicate gate dielectric thin films showed that the band gap, the valence band offset and the conduction band offset increased as the SiO 2 content increased, which yielded a substantially reduced gate leakage current density. TheTiN/(LaO or ZrO)/SiO 2 metal gate stack structures in CMOS demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/(LaO or ZrO)/SiO 2 gate stack structures. The electrical characteristics of GIZO TFTs mainly depend on the contents of indium (In) and gallium (Ga). The band gap energies of the GIZO thin films increased with the increase in their Gallium (Ga)/Indium (In) ratios. The barrier height of GIZO/Mo also increased by increasing in the Ga/In ratio, and then the threshold voltages positively shift. We also applied AES and REELS

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

Cited by 2 publications

References 21 publications

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Applications of surface analysis to Oxide Thin Film Devices

Contact Info

Product

Resources

About