280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$

Yun, Byeonghun; Park, Dae‐Woong; Choi, Chan-Gyu; Song, Ho-Jin; Lee, Sang‐Gug

doi:10.1109/rfic54546.2022.9863110

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…Due to the lower f max of CMOS (∼350 GHz) transistors and SiGe HBTs (∼450 GHz) and their lower breakdown voltages, power amplifiers in silicon IC technologies exhibit 5 dBm P sat with 1.2% PAE at 290 GHz, 13.5 dBm P sat with 1.47% PAE at 255 GHz and 8.3 dBm P sat with 0.7% PAE at 305 GHz using 130 nm SiGe HBTs, and −8.1 dBm P sat with 1.9% PAE at 309 GHz and 10.5 dBm P sat with 2.7% PAE at 243 GHz using 65 nm CMOS technologies. With the advent of 720 GHz f max SiGe HBTs, the power amplifier operating frequency is expected to increase to ∼500 GHz.…”

Section: Performance Of Thz Solid-state Electronicsmentioning

confidence: 99%

“…Even with circuit design techniques incorporating positive feedback, the maximum frequency of amplifiers and oscillators is limited to 60–80% of f max . ,, To overcome this, nonlinear devices driven by lower-frequency sources are employed to produce and select desired higher-order harmonics to generate and detect signals at frequencies greater than f max . When a nonlinear device is driven at the input frequency of f in , signals at higher order harmonic frequencies, which is an integer multiple of f in , are generated.…”

Section: Performance Of Thz Solid-state Electronicsmentioning

confidence: 99%

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Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

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Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching −3.9 dBm at 440 GHz for a single unit in CMOS and −10.7 dBm at 1.01 THz for a 42-element array in SiGe BiCMOS. The smallest power of a 1 kHz bandwidth signal at 420 GHz that can be detected has improved by 100 million times. These and the expected improvements from the ongoing activities should be sufficient to support high resolution imaging with a range of up to several hundred meters, gas sensing up to ∼1 THz, and communication over ∼1000 m. The silicon IC technologies enable integration of complex systems into a small form factor and reduction of manufacturing cost. When broad deployment of submillimeter wave systems for everyday life applications becomes necessary, the silicon IC infrastructure will be the most capable to support the high-volume manufacturing need.

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Section: Performance Of Thz Solid-state Electronicsmentioning

confidence: 99%

Section: Performance Of Thz Solid-state Electronicsmentioning

confidence: 99%

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

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“…However, previous studies barely consider practical challenges of implementing passive elements in on-chip processes at such high frequencies. In single-ended amplifier, Y/preZ-embedding gain-boosting technique is commonly used, with the Y-embedding network often being a lengthy transmission line with a large characteristic impedance [14]. However, due to design rules and high parasitic capacitors from the signal line to ground, implementing a transmission line with a large characteristic impedance is challenging.…”

Section: Introductionmentioning

confidence: 99%

A 194 GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65 nm CMOS

He,

Xie,

Wang

2024

Preprint

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In this letter, we introduce a 194 GHz threestage differential driver amplifier operating at near-fmax frequencies. To address practical considerations associated with implementing on-chip embedding elements within the sub-THz frequency range, we employ a three-element embedded core consisting of three types of embedding networks. This design approach offers greater flexibility in selecting the required embedding elements. Based on the proposed embedded core, a three-stage drive amplifier is implemented in 65 nm CMOS process. The measurement results indicate that the proposed amplifier exhibits a smallsignal gain of 20.4 dB, a Psat of -2.1 dBm, and a peak PAE of 2.2% at 194 GHz.

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Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies

Choi

Han

2023

Journal of Applied Physics

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The performance of CMOS transmitters and receivers operating at the submillimeter electromagnetic wave frequencies have sufficiently improved for use in active transmission and reflection-mode imaging applications that have the potential for broad deployment and utilization. Imaging integrated circuits have the potential to be large in area to support a high number of pixels along with digital backend processing circuits. For high volume imaging applications that may eventually be included in automobiles, smartphones, laptops, tablets, and others, a large manufacturing capacity to support the volume of large area ICs is necessary. For this, the use of CMOS technologies with a much larger manufacturing capacity is favored. It should be possible to improve the performance of CMOS circuits to increase the range, and operation margin and frequency. The electronically steerable submillimeter-wave reflector technology holds the promise for improving the performance and energy efficiency of submillimeter-wave imaging systems by multiple orders of magnitude, and it is a critical research area. Increasing the operating frequency from 430 to 850 GHz using CMOS integrated circuits to improve the angular resolution by 2X at a given form factor (∼0.15° for a reflector diameter of 15 cm) can make the submillimeter-wave imaging competitive to the LIDAR angular-resolution performance, while providing superior capabilities in visually impaired conditions and making the imaging devices more affordable.

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280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$

Cited by 6 publications

References 8 publications

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

A 194 GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65 nm CMOS

Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies

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