2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2022
DOI: 10.1109/rfic54546.2022.9863110
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280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$

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Cited by 6 publications
(3 citation statements)
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“…Due to the lower f max of CMOS (∼350 GHz) transistors and SiGe HBTs (∼450 GHz) and their lower breakdown voltages, power amplifiers in silicon IC technologies exhibit 5 dBm P sat with 1.2% PAE at 290 GHz, 13.5 dBm P sat with 1.47% PAE at 255 GHz and 8.3 dBm P sat with 0.7% PAE at 305 GHz using 130 nm SiGe HBTs, and −8.1 dBm P sat with 1.9% PAE at 309 GHz and 10.5 dBm P sat with 2.7% PAE at 243 GHz using 65 nm CMOS technologies. With the advent of 720 GHz f max SiGe HBTs, the power amplifier operating frequency is expected to increase to ∼500 GHz.…”
Section: Performance Of Thz Solid-state Electronicsmentioning
confidence: 99%
See 1 more Smart Citation
“…Due to the lower f max of CMOS (∼350 GHz) transistors and SiGe HBTs (∼450 GHz) and their lower breakdown voltages, power amplifiers in silicon IC technologies exhibit 5 dBm P sat with 1.2% PAE at 290 GHz, 13.5 dBm P sat with 1.47% PAE at 255 GHz and 8.3 dBm P sat with 0.7% PAE at 305 GHz using 130 nm SiGe HBTs, and −8.1 dBm P sat with 1.9% PAE at 309 GHz and 10.5 dBm P sat with 2.7% PAE at 243 GHz using 65 nm CMOS technologies. With the advent of 720 GHz f max SiGe HBTs, the power amplifier operating frequency is expected to increase to ∼500 GHz.…”
Section: Performance Of Thz Solid-state Electronicsmentioning
confidence: 99%
“…Even with circuit design techniques incorporating positive feedback, the maximum frequency of amplifiers and oscillators is limited to 60–80% of f max . ,, To overcome this, nonlinear devices driven by lower-frequency sources are employed to produce and select desired higher-order harmonics to generate and detect signals at frequencies greater than f max . When a nonlinear device is driven at the input frequency of f in , signals at higher order harmonic frequencies, which is an integer multiple of f in , are generated.…”
Section: Performance Of Thz Solid-state Electronicsmentioning
confidence: 99%
“…However, previous studies barely consider practical challenges of implementing passive elements in on-chip processes at such high frequencies. In single-ended amplifier, Y/preZ-embedding gain-boosting technique is commonly used, with the Y-embedding network often being a lengthy transmission line with a large characteristic impedance [14]. However, due to design rules and high parasitic capacitors from the signal line to ground, implementing a transmission line with a large characteristic impedance is challenging.…”
Section: Introductionmentioning
confidence: 99%